Semiconductor Module Self-Diagnosis via Pulse Wave Impedance Monitoring
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Solution Overview
Problem
Existing semiconductor modules face challenges in detecting early signs of breakdown, such as crack formation and impedance changes, which can lead to electrical and thermal conductivity failures, making it difficult to provide timely warnings and maintenance for electronic devices.
Innovation Solution
A semiconductor module design incorporating a substrate, first wiring, electrode pad, junction, oscillator, and detector, where the oscillator generates a pulse wave and the detector monitors the output wave to detect impedance changes, with specific impedance relationships ensuring effective signal detection, and an analysis unit processes data to indicate potential breakdowns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional monitoring methods are used to detect breakdown signs, then detection capability is insufficient, but adding complex detection systems increases device complexity
Solution Approach 1:
The semiconductor device performs self-diagnosis by using its own internal components (oscillator and detector) to monitor its own operational status. The oscillator generates pulse waves that travel through internal wiring and junctions, and the detector monitors reflected waves to identify breakdown signs, eliminating the need for external complex detection systems.
Solution Approach 2:
The patent introduces pulse waves as an intermediary carrier to transmit diagnostic information through the device's internal wiring and junctions. By analyzing the reflected pulse waves, the system can detect impedance changes caused by cracks or degradation without requiring direct physical access to the junctions or complex sensing mechanisms.
2Reliability
If early breakdown detection is implemented, then device availability improves, but detection accuracy for crack existence and spread is insufficient
Solution Approach 1:
The system uses electromagnetic pulse waves that interact with the physical structure of the wiring and junctions. When cracks or impedance changes occur, they reflect the pulse waves back to the detector, creating detectable signal patterns that indicate the presence and progression of breakdown, thereby improving both early detection capability and accuracy.
Solution Approach 2:
The detector continuously monitors reflected pulse waves and provides feedback about the operational status of wiring and junctions. This feedback mechanism enables real-time detection of impedance changes, allowing the system to identify crack existence and spread accurately while maintaining high device availability through timely warnings.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design allows for accurate detection of crack existence and spread at the junction, enabling early warning systems and improving the availability of electronic devices by providing timely maintenance opportunities.
Implementation Method 1
The oscillator is disposed in contact with the first wiring, and oscillates a pulse wave of a voltage toward the junction via the first wiring
Implementation Method 2
the characteristic impedance Z0 and the impedance Z1 satisfy a following relationship (1), enabling accurate measurement
Data Source
AI summary
According to one embodiment, a semiconductor module comprises a substrate, a first wiring, an electrode pad, a junction, an oscillator, and a detector. The first wiring is disposed on the substrate, and has a characteristic impedance Z0. The electrode pad is connected to the first wiring. The junction is disposed on the electrode pad, and has an impedance Z1. The oscillator is disposed in contact with the first wiring, and oscillates a pulse wave of a voltage toward the junction via the first wiring. The detector is disposed in contact with the first wiring, and detects an output wave of the pulse wave from the junction. The characteristic impedance Z0 and the impedance Z1 satisfy a following relationship (1),Z0-Z1Z0≤0.05.(1)