Semiconductor Thin Film Deposition via Pulsed Gas Supply
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Solution Overview
Problem
As semiconductor devices become increasingly integrated and fine-sized, the aspect ratios of patterns within them have increased, posing challenges in uniformly forming thin films on substrates with high aspect ratio structures like via holes or trenches, where reactants struggle to reach the inner surfaces effectively.
Innovation Solution
A method involving the controlled supply of reactants and purge gases using mass flow controllers (MFCs) and auxiliary MFCs with different opening/closing times, along with storage, to form a precursor layer and react with it, followed by purging excess reactants and forming a thin film, ensuring efficient discharge and improved step coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional continuous gas supply methods are used, then the manufacturing process is simple, but reactants cannot effectively reach the inner surfaces of high aspect ratio structures
Solution Approach 1:
The patent implements periodic pulsing of reactant gas supply combined with periodic purge cycles. The MFC alternates between supplying reactant gas and purging with inert gas, creating periodic action that enhances gas flow dynamics and improves reactant penetration into high aspect ratio structures while maintaining film uniformity
Solution Approach 2:
The patent applies preliminary purging action before reactant supply and intermediate purging during deposition. By performing purge operations beforehand and between reactant supply cycles, excess reactants are removed in advance, preventing unwanted reactions and improving step coverage on high aspect ratio structures
2Manufacturing precision
If reactant supply time is increased to improve step coverage, then film quality improves, but manufacturing productivity decreases
Solution Approach 1:
The patent maintains continuous useful action by overlapping reactant supply pulses with substrate rotation and heater operation. The MFC continuously pulses reactant gas while the substrate rotates continuously, ensuring uninterrupted deposition process that improves step coverage without sacrificing productivity
Solution Approach 2:
The patent introduces dynamic control of gas supply parameters including variable pulse width, frequency, and amplitude based on real-time process conditions. The MFC dynamically adjusts reactant gas flow rates during deposition to optimize step coverage while maintaining high deposition rates for productivity
3Manufacturing precision
If purge gas flow is increased to remove excess reactants, then reaction control improves, but energy consumption increases
Solution Approach 1:
The patent applies partial purging action by supplying purge gas at controlled flows that are sufficient to remove excess reactants but not excessive. The MFC regulates purge gas flow to achieve just enough purging effect for proper reaction control, avoiding energy waste from overly aggressive purging
Solution Approach 2:
The patent implements local purging action targeted at specific regions where excess reactant accumulation occurs, particularly in high aspect ratio structures. By directing purge gas flow locally to critical areas rather than uniformly across the entire chamber, energy consumption is reduced while maintaining effective reaction control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the productivity of semiconductor device manufacturing by efficiently forming thin films on high aspect ratio structures with improved step coverage characteristics, reducing the time to form the films and increasing the partial pressure of reactants to ensure uniform deposition.
Implementation Method 1
supplying a precursor gas to the inside of the processing chamber to form a precursor layer on the substrate
Implementation Method 2
supplying a reaction gas to the inside of the processing chamber to form a thin film on the substrate by reacting the precursor layer and the reaction gas
Implementation Method 3
supplying the purge gas, of which flow has been controlled, to the inside of processing chamber
Data Source
AI summary
A method of manufacturing a semiconductor device, the method including supplying a first reactant to inside a processing chamber into which a substrate has been introduced; controlling a flow of a first purge gas and storing the first purge gas, of which flow has been controlled, in a first storage for a given time period; supplying the first purge gas from the first storage to the inside of the processing chamber after supplying the first reactant; and supplying a second reactant to the inside of the processing chamber after supplying the first purge gas.