Semiconductor Device Punch-Through Prevention via Polarity Segmentation
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Solution Overview
Problem
High voltage semiconductor devices, such as LDMOS, face challenges in manufacturing and structure that lead to punch-through issues due to voltage differences, which affect their operational efficiency and reliability.
Innovation Solution
A semiconductor device structure is developed with a first lightly-doped region formed below the source region to prevent excessive expansion and punch-through, featuring a substrate with source and drain regions, a gate structure, and isolation regions of different polarities, allowing for both positive and negative voltage operations by controlling voltage applications across these regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a lightly-doped region is formed below the source region to prevent punch-through, then the reliability is improved, but the device complexity increases
Solution Approach 1:
The device is segmented into multiple doped regions with different polarities (first lightly-doped region with second-polarity, source region with first-polarity, isolation region with second-polarity) to prevent punch-through while maintaining manageable structural complexity through functional division
Solution Approach 2:
Different regions are assigned different doping qualities (lightly-doped vs. heavily-doped, different polarities) to address the specific punch-through problem locally without requiring complex global structural changes
2Reliability
If isolation regions with different polarities are used to maintain voltage integrity, then the reliability is improved, but the manufacturing precision requirements increase
Solution Approach 1:
The invention changes the doping parameters (polarity, concentration) of different regions to achieve voltage integrity. The first lightly-doped region has second-polarity opposite to the source region's first-polarity, creating electrical isolation that maintains voltage integrity without requiring extremely precise manufacturing tolerances
Data Source
AI summary
A semiconductor device and an operating method of the same are disclosed. The semiconductor device includes a substrate, a source region, a drain region, a gate structure, a first lightly-doped region, and a first isolation region. The source region and the drain region are formed in the substrate. The gate structure is formed on the substrate and between the source region and the drain region. The first lightly-doped region is formed below the source region. The first isolation region is formed in the substrate and surrounding the source region, the drain region, and the first lightly-doped region. The source region and the drain region have a first-polarity, and the first lightly-doped region and the first isolation region have a second-polarity.