Semiconductor Qubit Gates Embedded in Cavities to Cut Variability
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Solution Overview
Problem
The variability between semiconductor qubits in quantum devices is high due to charge disorder at semiconductor/dielectric interfaces, which affects the stability and control of qubits, posing a challenge for creating a large number of qubits necessary for practical quantum computing.
Innovation Solution
A quantum device with semiconductor qubits is designed using 'penetrating' gates within semiconductor layers, reducing the impact of charge disorder by moving semiconductor/dielectric interfaces away from the metallic gates, and employing a heterostructure with confinement potential barriers to electrons or holes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metallic gates are deposited above semiconductor layers with gate oxide, then qubit confinement and control is achieved, but charge disorder at semiconductor/dielectric interfaces causes high qubit variability
Solution Approach 1:
The patent transitions from conventional planar gates to three-dimensional penetrating gates that extend vertically through the semiconductor heterostructure. This dimensional change allows gates to reach into the semiconductor bulk, screening charge disorder at interfaces from affecting qubits located deeper in the structure, thereby reducing qubit variability while maintaining control capability
Solution Approach 2:
The patent introduces a semiconductor cavity as an intermediary structure between the metallic gate and the qubit confinement region. This cavity allows the gate to penetrate through the gate oxide and semiconductor layers, creating a direct electrical connection that screens interface charge disorder while enabling precise qubit control through the cavity structure
2Object-affected harmful factors
If conventional gates with gate dielectric are used, then qubit confinement is achieved, but semiconductor/dielectric interfaces close to gates increase charge disorder impact
Solution Approach 1:
The patent segments the gate structure into multiple components: a metallic gate portion, a semiconductor cavity, and integrated semiconductor gates within the heterostructure. This segmentation allows the metallic gate to be positioned away from critical interfaces while maintaining control through the cavity, reducing charge disorder impact without requiring entirely new gate technologies
Solution Approach 2:
The patent implements nested gate structures where semiconductor gates are embedded within the semiconductor heterostructure layers, and metallic gates penetrate through these layers into cavities. This nesting allows multiple gate functions to be integrated at different levels, providing both confinement and control while managing interface charge effects
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly reduces qubit variability, simplifies control architecture, and facilitates qubit adjustment, enabling the creation of quantum devices with at least 50 qubits.
Implementation Method 1
a layer of a first semiconductor arranged over a layer of a second semiconductor which bandgap energy is different from that of the first semiconductor, such that one of the layers forms a confinement potential barrier to electrons or holes
Implementation Method 2
electrically-conductive control gates, each arranged at least partially in one of the cavities
Data Source
AI summary
A quantum device with semiconductor qubits, comprising at least: a layer of a first semiconductor arranged on a layer of a second semiconductor, the forbidden energy band of which is different from that of the first semiconductor, such that one of the layers forms a confinement potential barrier with respect to the electrons or the holes intended to be located in confinement regions formed in the other layer; cavities formed through only one portion of the thickness of the layer of the first semiconductor; and electrically conductive control gates at least partially arranged individually in one of the cavities.