Semiconductor Package Radiation Shield Metal Layer
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Solution Overview
Problem
Semiconductor devices face issues with radiation-induced soft errors due to α rays passing through thin silicon substrates, causing malfunctions and data loss in memory controllers, particularly in miniaturized devices where conventional radiation-resistant substrates are expensive and unreliable.
Innovation Solution
Incorporating a metal layer with a shorter α ray range than single-crystal silicon between the semiconductor chip and the substrate, such as copper or nickel, to absorb α rays and prevent them from reaching the circuit, while using a resin substrate with glass fibers for additional radiation discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a thin silicon substrate is used in miniaturized semiconductor devices, then device size is reduced, but α rays pass through more easily causing radiation-induced soft errors
Solution Approach 1:
A metal layer is introduced as an intermediary component between the substrate and semiconductor chip. This metal layer specifically blocks α rays while allowing electrical signals to pass through, solving the contradiction by providing radiation protection without interfering with the device's electrical functionality.
Solution Approach 2:
The patent employs a composite structure combining metal material (for radiation blocking) with the semiconductor substrate. This composite approach leverages the unique properties of each material: the metal's ability to block α rays and the semiconductor's electrical conductivity, achieving both radiation resistance and device functionality.
2Reliability
If conventional radiation-resistant substrates are used, then reliability against radiation is improved, but cost increases and manufacturing reliability decreases
Solution Approach 1:
The patent replaces expensive conventional radiation-resistant substrates with a more economical solution: a standard substrate combined with a thin metal layer. This approach achieves the same radiation protection effect at lower cost and with better manufacturing reliability, treating the metal layer as a cost-effective protective component.
Solution Approach 2:
The invention changes the approach to radiation protection by modifying the structural parameters of the device - adding a metal layer with specific thickness and material properties - rather than changing the entire substrate material. This parameter-based solution maintains manufacturing simplicity while achieving radiation resistance.
3Reliability
If a metal layer is added to block α rays, then radiation protection is improved, but device structure becomes more complex
Solution Approach 1:
The metal layer serves multiple functions simultaneously: it blocks α rays for radiation protection, maintains electrical signal transmission, and can serve as part of the device's electrical interconnection structure. This multi-functionality reduces the need for additional separate components, thereby limiting the increase in structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively prevents α ray-induced malfunctions and data loss in semiconductor memory devices by reducing the α ray range, allowing for thinner substrates and cost-effective, reliable radiation protection.
Implementation Method 1
A metal layer is provided between the second surface of the semiconductor chip and the upper surface of the substrate. A metal material, for which the range of α rays is shorter than for single-crystal silicon, is used in the metal layer.
Implementation Method 2
A glass material contained in the substrate or the adhesive layer may emit radiation such as α rays in some cases.
Data Source
AI summary
A semiconductor device includes a substrate and a semiconductor chip. The semiconductor chip includes a semiconductor element on a first surface thereof. The semiconductor chip is provided on the substrate such that a second surface thereof, which is opposite to the first surface, faces an upper surface of the substrate. A metal layer is provided between the second surface of the semiconductor chip and the upper surface of the substrate. A metal material, in which the range of α rays is shorter than for single-crystal silicon, is used in the metal layer.