Semiconductor RC Filter Layout With Alternating Trench Capacitors
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Solution Overview
Problem
Conventional semiconductor devices with resistive, inductive, and capacitive elements occupy large areas due to separate arrangements of these elements, leading to inefficient use of space.
Innovation Solution
A semiconductor device configuration where a resistive element and a capacitive element are integrated by forming a trench-type capacitive element with a conductive layer embedded in an insulating film, alongside a shallower resistive element, allowing for alternate arrangement and reduced area usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If resistive elements, inductor elements, and capacitive elements are arranged in separate regions, then each element can be optimized independently, but the occupying area becomes large
Solution Approach 1:
The patent merges the capacitive element and resistive element into a single integrated structure. The trench-type capacitive element and the shallower resistive element share the same substrate region and are formed through integrated processing steps, allowing both elements to coexist in a compact area while maintaining their individual functional optimizations
Solution Approach 2:
The patent implements a nested structure where the resistive element (shallower trench) is embedded within the same substrate region as the capacitive element (deeper trench). The resistive element occupies the upper portion of the substrate while the capacitive element extends deeper, creating a vertical nesting arrangement that reduces horizontal area occupation
2Area of stationary object
If a trench-type capacitive element and a shallower resistive element are integrated, then area efficiency is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by forming the resistive element (shallower trench) before forming the capacitive element (deeper trench). The resistive element is created in an upper part of the first diffusion layer, and then the capacitive element is formed by etching deeper trenches in the same region. This sequential approach simplifies manufacturing by establishing the shallower structure first, providing a reference framework for the deeper capacitive structure
Solution Approach 2:
The patent applies local quality by creating different trench depths in different locations within the same substrate region. The capacitive element requires deeper trenches for higher capacitance, while the resistive element requires shallower trenches for appropriate resistance values. This localized variation in trench depth allows both elements to achieve their optimal electrical characteristics within a compact integrated structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the overall area required for the RC filter, enhancing area efficiency while maintaining the functionality of both resistive and capacitive elements.
Implementation Method 1
a conductive layer embedded in a trench provided in an upper part of the first diffusion layer via an insulating film, the conductive layer forming a capacitive element together with the first diffusion layer and the insulating film
Implementation Method 2
a second diffusion layer of the first conductivity type provided in an upper part of the first diffusion layer so as to be shallower than the trench and to constitute a resistive element
Data Source
AI summary
A semiconductor device includes: a substrate of a first conductivity type; a first diffusion layer of a second conductivity type provided in an upper part of the substrate; a conductive layer embedded in a trench provided in an upper part of the first diffusion layer via an insulating film, the conductive layer forming a capacitive element together with the first diffusion layer and the insulating film; and a second diffusion layer of the first conductivity type provided in an upper part of the first diffusion layer so as to be shallower than the trench and to constitute a resistive element, wherein at least a part of the trench and at least a part of the second diffusion layer are alternately arranged side by side in a plan view.