Semiconductor Read Timing Management via Address Group Segmentation
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Solution Overview
Problem
Semiconductor devices face challenges in achieving higher read frequencies due to the need to align read control timing settings with worst read performance, which suppresses higher read frequencies and performance.
Innovation Solution
Implementing a method to detect the starting address of data in semiconductor devices and reconfigure read control timing settings to support higher read frequencies by switching between different timing profiles associated with varying read speeds, allowing for higher read performance without consistently using lower speeds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If read control timing settings are aligned with worst read performance, then read reliability is ensured, but read frequency is suppressed
Solution Approach 1:
The memory array is divided into multiple banks, and the address space is segmented into different address groups. By detecting which address group the starting address belongs to, the system can selectively apply different timing profiles to different segments of memory operations, allowing high-speed reading for most addresses while maintaining reliability for worst-case addresses.
Solution Approach 2:
The read control timing settings are made dynamic rather than static. The system detects the starting address and dynamically selects the appropriate timing profile based on the address group. This dynamic adaptation allows the read frequency to be optimized for each specific read operation rather than being constrained by the worst-case scenario for all operations.
2Productivity
If higher read frequency is used, then read performance is improved, but timing alignment with worst read performance is lost
Solution Approach 1:
Different timing profiles with different quality characteristics are assigned to different address groups. Address groups corresponding to worst read performance locations receive timing profiles with more conservative (slower) settings to ensure reliability, while other address groups receive timing profiles optimized for higher speed. This local differentiation allows high read performance overall while maintaining timing alignment where needed.
Solution Approach 2:
The system changes timing parameters dynamically based on the detected address group. Multiple timing profiles with different parameter sets (such as different read cycle times, different clocking schemes) are prepared in advance. The controller selects and applies the appropriate parameter set based on the starting address, enabling parameter optimization for each read operation while ensuring reliability parameters are met for critical addresses.
3Speed
If timing profiles are customized for different address groups, then read speed optimization is achieved, but device complexity increases
Solution Approach 1:
The address space is segmented into a limited number of address groups (e.g., two groups), each associated with a specific timing profile. This segmentation approach balances optimization potential with implementation complexity - enough groups to capture the essential performance variations, but not so many that the management becomes unmanageable. The detector simply needs to identify which group the starting address belongs to.
Solution Approach 2:
The system includes automatic detection and selection logic that operates without external intervention. The detector automatically identifies the address group, and the controller automatically selects and applies the appropriate timing profile. This self-service mechanism reduces the operational complexity for users, as they don't need to manually configure or manage the timing profiles - the system handles it autonomously based on the read address.
Data Source
AI summary
Systems, devices, methods, and circuits for managing read timing in semiconductor devices are provided. In one aspect, a semiconductor device includes: a memory array configured to store data and a circuitry coupled to the memory array and configured to read stored data from the memory array. The circuitry is configured to: obtain a starting address of target data to be read based on a read instruction, determine that the starting address is in a first address group of a plurality of address groups, each of the plurality of address groups being associated with a respective reading speed, and read out the target data from the memory array based on the starting address being in the first address group.