Semiconductor Structure Rear Surface Ion Implantation Grounding
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Solution Overview
Problem
Conventional CMOS components have poor electrical performance due to shallow p-type regions resulting from limited ion implantation depth, leading to inadequate substrate grounding.
Innovation Solution
A semiconductor structure and manufacturing method that includes a semiconductor substrate with a target layer, metal pads, conductive lines, conductive plugs, and an isolating liner, where ions are implanted through the rear surface to form a deep implanted region connected to the rear surface, and conductive lines and plugs are arranged to ensure complete substrate grounding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ion implantation is performed through the front surface to form a p-type region, then the p-type region can be formed on the substrate, but the penetration depth is limited by implant energy resulting in shallow depth and poor grounding effect
Solution Approach 1:
The patent applies inversion by performing ion implantation through the rear surface of the substrate instead of the conventional front surface approach. This allows the ion beam to penetrate directly into the substrate from the back, achieving much deeper p-type region formation (up to 50-100 micrometers) compared to front surface implantation. The inverted approach eliminates the limitation of shallow penetration depth while maintaining effective grounding across the entire substrate.
2Reliability
If the p-type region is formed with shallow depth, then the implantation process is simpler, but the grounding effect is poor leading to poor electrical performance
Solution Approach 1:
The patent inverts the conventional grounding structure by forming the deep p-type region through rear surface implantation rather than front surface formation. This single inversion achieves complete substrate grounding with superior electrical performance without requiring complex multi-layer grounding structures or additional components, thereby improving reliability while maintaining structural simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach improves substrate grounding, enhancing electrical performance characteristics of CMOS components by ensuring deeper penetration and better electrical connectivity.
Implementation Method 1
implanting ions through a rear surface opposite to the front surface to form an implanted region
Data Source
AI summary
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate, a target layer, a plurality of metal pads, a plurality of conductive lines, a plurality of conductive plugs, an isolating liner, and a plurality of metal contacts. The semiconductor substrate has a front surface, a rear surface opposite to the front surface, and an implanted region connected to the rear surface. The target layer is disposed over the front surface. The metal pads are disposed over the target layer. The plurality of conductive lines are disposed within the semiconductor substrate and the target layer and connected to the metal pads. The conductive plugs are disposed in the implanted region. The isolating liner encircles the conductive plugs. The metal contacts are disposed over the conductive lines and the conductive plugs.