Semiconductor Device Recess Adhesion Design
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Solution Overview
Problem
Semiconductor devices with high packaging density face challenges in ensuring reliable adhesion between sealing materials and insulating substrates due to small adhesion areas, which can lead to peeling under thermal stress, and existing solutions either fail to directly suppress peeling or require space that inhibits size reduction.
Innovation Solution
A semiconductor device design featuring a case member with a recess that faces the insulating substrate, allowing for increased adhesion area and improved resistance to thermal stress, where the recess is continuous with the connection portion of the case member and has sufficient size to be reliably filled with sealing material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If packaging density of semiconductor elements is increased, then device size is reduced, but adhesion area between sealing material and insulating substrate decreases
Solution Approach 1:
The invention transitions from a two-dimensional adhesion problem (sealing material directly on insulating substrate) to a three-dimensional solution by forming grooves in the copper base and filling them with sealing material. This vertical dimensionality change increases the adhesion area without increasing the horizontal footprint, thereby resolving the contradiction between reduced device size and sufficient adhesion area.
Solution Approach 2:
The sealing structure is segmented into multiple rows of grooves formed in the copper base, each groove acting as an independent adhesion zone. This segmentation allows the sealing material to bond at multiple discrete locations, collectively providing sufficient total adhesion area even when the overall device size is reduced.
2Reliability
If grooves are formed in copper base to improve adhesion, then sealing material adhesion is improved, but device size reduction is inhibited
Solution Approach 1:
The grooves are formed vertically in the copper base and filled with sealing material, utilizing the thickness dimension of the copper base to create adhesion area. This approach improves reliability without requiring additional horizontal space, thus allowing device size reduction to proceed simultaneously.
3Stability of the object's composition
If facing surface of recess is disposed between upper and lower surface height positions of semiconductor element, then deformation is suppressed, but filling recess with sealing material becomes difficult
Solution Approach 1:
The recess is pre-formed in the copper base with its opening positioned at a height that facilitates subsequent filling with sealing material. This preliminary structural preparation ensures that the sealing material can be easily introduced and filled into the recess without manufacturing difficulties, while still achieving the stress cancellation effect.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design enhances the joint strength between the sealing material and insulating substrate, improving the reliability of the semiconductor device by increasing the area of adhesion and resistance to thermal stress, while allowing for size reduction without compromising reliability.
Implementation Method 1
improve adhesion between the sealing material and the insulating substrate
Implementation Method 2
a stress directed upward from the cavity bottom surface and a stress directed toward the cavity bottom surface from an upper portion of the sidewall, which are generated upon application of heat to the semiconductor element, cancel each other out
Data Source
AI summary
A semiconductor device includes an insulating substrate having a main surface, a semiconductor element, a case member, and a sealing resin as a sealing material. The case member includes a recess that is continuous with a connection portion of the case member connected to the insulating substrate, and that faces the internal region. The recess includes a facing surface as an inner wall portion facing the main surface of the insulating substrate. A distance from the main surface of the insulating substrate to the facing surface as the inner wall portion is greater than a distance from the main surface to an upper surface of the semiconductor element.