Semiconductor Chip Recess Formation for Cost-Efficient Singulation
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Solution Overview
Problem
Current methods for producing semiconductor chips are not cost-efficient, particularly when it comes to producing radiation-emitting chips, as they often damage substrates during the process and require high-temperature wet-chemical processes for singulation, which are costly and inefficient.
Innovation Solution
A method involving the deposition of semiconductor layers on a substrate, generating recesses on the side facing away from the substrate, removing the substrate using laser lift-off or mechanical methods, and thinning the semiconductor layer sequence to maintain a residual thickness, allowing for cost-effective singulation and reuse of substrates without exposing the substrate bottom surface, thus preventing damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If recesses are generated by mechanical and/or chemical removal of material, then the semiconductor layer sequence can be singulated, but the substrate may be damaged and the process becomes costly
Solution Approach 1:
The method performs preliminary thinning of the semiconductor layer sequence from the substrate side before generating recesses. This preliminary action creates a residual thickness that prevents etching through the substrate, thereby avoiding substrate damage while still enabling subsequent singulation through recess formation
Solution Approach 2:
The etching process is segmented into two distinct stages: first, thinning the semiconductor layer sequence to a residual thickness, and second, generating recesses that do not penetrate through the substrate. This segmentation allows each step to be optimized independently, preventing substrate damage while achieving singulation
2Manufacturing precision
If high-temperature wet-chemical processes are used for singulation, then complete separation can be achieved, but the process becomes costly and inefficient
Solution Approach 1:
The method changes the parameters of the etching process by controlling the depth of recess formation and the residual thickness of the semiconductor layer sequence. This allows the use of more efficient, lower-temperature processes that achieve sufficient singulation without requiring extreme conditions
Solution Approach 2:
The recesses are generated to a depth that provides sufficient singulation but stops before completely penetrating the substrate. This partial action achieves the necessary separation while avoiding the need for excessive etching that would require costly high-temperature processes and risk substrate damage
3Manufacturing precision
If the substrate bottom surface is exposed during etching, then complete recess formation is achieved, but the substrate becomes damaged and cannot be reused
Solution Approach 1:
The method performs preliminary thinning to create a controlled residual thickness before recess formation. This preliminary action ensures that subsequent etching achieves precise recess depth without exposing the substrate bottom surface, thereby maintaining substrate integrity for reuse
Solution Approach 2:
The residual thickness of the semiconductor layer sequence acts as an intermediary protective layer between the etching process and the substrate. This intermediary layer allows complete recess formation in the semiconductor material while preventing etching from reaching and damaging the substrate
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of cost-efficient semiconductor chips with minimal substrate damage, allowing for efficient reuse and reducing the need for high-temperature processes, while ensuring effective separation and electromagnetic radiation exit without total reflection, thereby increasing radiation intensity.
Implementation Method 1
an active region 22, in which electromagnetic radiation may be generated during operation
Implementation Method 2
The removal of the substrate may for example be performed by a laser detaching process, for example by laser lift off
Data Source
AI summary
The invention relates, inter alia, to a method for producing a plurality of semiconductor chips, the method comprising the following steps: providing a substrate (1); applying a semiconductor layer sequence (2) to the substrate (1); generating a plurality of recesses (6) in the semiconductor layer sequence (2) on the side of the semiconductor layer sequence (2) that is facing away from the substrate (1); detaching the substrate (1) from the semiconductor layer sequence (2); thinning the semiconductor layer sequence (2) on the side that was facing the substrate (1) prior to detaching the substrate (1).