Semiconductor Device Recess Structures for Crack Resistance
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Solution Overview
Problem
Semiconductor devices face challenges in achieving improved quality, yield, and reliability due to cracks and moisture issues during fabrication, which can affect the functionality of the devices.
Innovation Solution
A semiconductor device design featuring recesses and conductive structures that surround the integrated circuit region, with a buffer region and conductive layers to prevent crack propagation and reduce stress, while also preventing contaminants from entering the functional circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional fabrication methods are used, then manufacturing simplicity is maintained, but cracks and moisture affect device functionality and reliability
Solution Approach 1:
The patent divides the semiconductor device into distinct regions with different structural characteristics: a first region containing the integrated circuit, a second region with a first recess, and a third region with a second recess. This segmentation allows each region to be optimized for its specific function while collectively improving overall device reliability by preventing crack propagation and moisture ingress.
Solution Approach 2:
The patent implements a nested recess structure where a first recess is formed within a second recess, creating concentric protective zones around the integrated circuit region. This nested configuration provides multiple barriers against cracks and contaminants, enhancing reliability without requiring completely separate protective structures.
2Reliability
If recesses and conductive structures are added to prevent crack propagation, then device reliability is improved, but fabrication complexity increases
Solution Approach 1:
The protective structure is segmented into multiple functional zones: conductive structures in the first region for electrical functionality, and recess structures in the second and third regions for mechanical protection. This segmentation allows the crack-resistant features to be integrated alongside functional elements rather than adding separate protective housings.
Solution Approach 2:
The patent merges protective recess structures with conductive structures within the same fabrication layers. The recesses are formed in conjunction with conductive layers and insulating layers, combining mechanical protection and electrical functionality in a single integrated structure rather than adding separate protective components.
3Object-affected harmful factors
If multiple conductive layers and insulating layers are stacked to form protective structures, then protection against contaminants is improved, but manufacturing precision requirements increase
Solution Approach 1:
The recess structures are formed preliminarily during the fabrication process before final device assembly, with conductive and insulating layers being deposited within the recess regions. This preliminary formation of protective structures ensures proper alignment and integration with underlying circuit layers, reducing the need for high-precision post-fabrication alignment.
Solution Approach 2:
The nested recess configuration allows conductive and insulating layers to be sequentially deposited within concentric zones, with each layer naturally aligned to the recess geometry. This nested approach provides self-alignment benefits that reduce manufacturing precision requirements compared to forming separate protective structures that would require precise positioning.
Data Source
AI summary
A reliable semiconductor device and a method for preparing the reliable semiconductor device are provided. The semiconductor device includes at least one die comprising an integrated circuit region; a first recess region surrounding the integrated circuit region; and a second recess region surrounding the first recess region. A first columnar blocking structure is disposed in the first recess region and a second columnar blocking structure is disposed in the second recess region.