Semiconductor Composite Film Recesses Mitigate Heterojunction Strain
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Solution Overview
Problem
Semiconductor composite films with heterojunctions face strain-related issues due to tensile or compressive stress, leading to cracking and increased manufacturing costs during subsequent processes like heat treatment or surface mechanical polishing.
Innovation Solution
A semiconductor composite film with a heterojunction is created by forming recesses in the semiconductor epitaxial layer through etching, which mitigates strain and reduces manufacturing costs by making the film more robust and facilitating subsequent processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a heterojunction is formed between the semiconductor epitaxial layer and the semiconductor substrate, then the semiconductor composite film can achieve functional integration and material advantages, but tensile or compressive stress is generated causing bending and strain
Solution Approach 1:
The patent introduces recesses at specific locations within the semiconductor epitaxial layer to locally compensate for stress. Rather than uniformly modifying the entire film, the recesses are strategically positioned to counteract the tensile or compressive stress generated at the heterojunction interface, thereby maintaining overall film flatness while preserving functional integration.
Solution Approach 2:
The patent modifies the physical structure of the epitaxial layer by creating recesses with specific depth, width, and positioning parameters. By adjusting these geometric parameters, the stress distribution within the composite film can be optimized to counterbalance the heterojunction-induced stress, thus maintaining film stability.
2Productivity
If subsequent manufacturing processes such as heat treatment or surface mechanical polishing are performed on the semiconductor composite film, then device fabrication can be completed, but cracking is easily caused due to the pre-existing strain
Solution Approach 1:
The patent applies preliminary anti-action by introducing recesses before subsequent manufacturing processes to pre-compensate for the stress that would otherwise lead to cracking during heat treatment or mechanical polishing. This preventive measure counteracts the harmful effects before they occur, enabling safe completion of subsequent processes.
Solution Approach 2:
The recesses act as stress-absorbing features that cushion the film against the additional stress introduced during subsequent manufacturing processes. By providing this beforehand cushioning, the film can withstand heat treatment and mechanical polishing without cracking.
3Reliability
If protection processes or measures are taken to prevent cracking during subsequent manufacturing, then yield can be improved, but manufacturing cost increases
Solution Approach 1:
The patent converts the harmful stress generated by the heterojunction into a beneficial effect by using the same stress to create recesses that compensate for the strain. This approach transforms the originally harmful stress into a useful feature that prevents cracking, thereby improving yield without requiring additional protection processes or increasing manufacturing cost.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The introduction of recesses in the semiconductor epitaxial layer effectively reduces strain, enhancing the robustness of the composite film and lowering manufacturing costs by preventing cracking and improving process efficiency.
Implementation Method 1
forming at least one recess, which is formed by etching the semiconductor epitaxial layer from the second surface toward the first surface
Data Source
AI summary
The present invention discloses a semiconductor composite film with a heterojunction and a manufacturing method thereof. The semiconductor composite film includes: a semiconductor substrate; and a semiconductor epitaxial layer, which is formed on the semiconductor substrate, and it has a first surface and a second surface opposite to each other, wherein the heterojunction is formed between the first surface and the semiconductor substrate, and wherein the semiconductor epitaxial layer further includes at least one recess, which is formed by etching the semiconductor epitaxial layer from the second surface toward the first surface. The recess is for mitigating a strain in the semiconductor composite film.