Semiconductor Contact Recess Insulation Under Misalignment
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Solution Overview
Problem
As integrated circuits (ICs) are designed at higher densities, variations in the manufacturing process lead to increased probabilities of circuit parts coming into contact with each other, resulting in device failures and yield loss due to insufficient insulation between conductive and semiconductive regions.
Innovation Solution
The formation of a semiconductor device with a first and second conductive or semiconductive region separated by a dielectric region of varying thickness, including oblique interfaces and a second dielectric layer deposited selectively to ensure adequate insulation, even with manufacturing misalignments.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If dimensional parameters are decreased to achieve higher device density, then device density is improved, but the probability of unintended contact between insulated circuit parts increases
Solution Approach 1:
The patent introduces a third vertical dimension by forming an elevated conductive structure that rises above the plane of adjacent conductive regions. This vertical protrusion allows the conductive structure to make contact with overlying interconnect layers while maintaining horizontal separation from adjacent conductive regions, thereby achieving high device density without unintended lateral contact.
Solution Approach 2:
The patent introduces a dielectric material as an intermediary substance between adjacent conductive regions. This dielectric material fills the space between conductive structures and provides electrical insulation, allowing conductive regions to be positioned in close proximity while preventing unintended electrical contact, thus enabling higher device density without compromising reliability.
2Quantity of substance
If dimensional parameters are decreased to achieve higher device density, then device density is improved, but manufacturing precision requirements become more stringent
Solution Approach 1:
The patent moves the contact interface to a different vertical level, allowing conductive structures to be separated in the horizontal plane while still achieving electrical connection through the vertical dimension. This eliminates the need for extremely precise horizontal alignment and separation control, thereby reducing manufacturing precision requirements while maintaining high device density.
Solution Approach 2:
The patent forms the elevated conductive structure and positions it within the dielectric material before finalizing the interconnect layer formation. This preliminary positioning ensures that the conductive structure is already correctly located in the vertical dimension, simplifying subsequent manufacturing steps and reducing the precision requirements for later alignment operations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach maintains high device density while ensuring adequate insulation between conductive regions, reducing the likelihood of device failures and enhancing manufacturing yield.
Implementation Method 1
a dielectric region separating the first and second conductive or semiconductive regions
Implementation Method 2
depositing a second dielectric material in the recess to form a second surface portion oriented at an oblique angle from the first surface portion
Data Source
AI summary
In some embodiments, a method of making a semiconductor device includes forming a recess in a first region of a first dielectric material, the first dielectric material at least partially embedding a semiconductor region, the recess having a first surface portion separated by a distance in a first direction from the semiconductor region by a portion of the first dielectric material; depositing a second dielectric material in the recess to form a second surface portion oriented at an oblique angle from the first surface portion; and depositing a conductive material in the recess. In some embodiments, the method further includes partially exposing the semiconductor region in a second recess in the first dielectric material and selectively depositing the second dielectric material on the first dielectric material, but not the semiconductor region, in the second recess.