Semiconductor Recess Measurement Using Volume Difference Calculation
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Solution Overview
Problem
There is a growing need for a reliable and efficient method to measure fine patterns in semiconductor devices as they are scaled down, requiring improved measurement systems and processes to optimize fabrication conditions and detect failures early.
Innovation Solution
A method and system that utilize multiple measurement instruments, including scanning electron microscopes, optical scatterometry instruments, and X-ray fluorescence analysis instruments, to obtain data on recess regions and conductive patterns, calculating measurement target parameters through a computer system to ensure accurate and reliable measurements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple measurement instruments are used to measure recess regions and conductive patterns, then measurement reliability is improved, but device complexity and process time increase
Solution Approach 1:
The measurement process is divided into distinct segments: first measuring the recess region geometry (width, depth, shape) separately, then measuring the conductive pattern mass separately, and finally calculating the target parameter from these independent measurements. This segmentation allows each measurement to be optimized independently while maintaining overall reliability.
Solution Approach 2:
The patent introduces an intermediary calculation process that uses measured parameters (recess volume, conductive pattern mass) to derive the target parameter (conductive pattern height or depth). This intermediary step transforms complex direct measurements into a reliable indirect measurement system.
2Measurement precision
If multiple measurement instruments and calculations are used, then measurement precision is improved, but processing time increases
Solution Approach 1:
The patent performs preliminary measurements of the recess region geometry (width, depth, shape) before conducting the mass measurement of the conductive pattern. These preliminary measurements are used to calculate the recess volume, which is then used in the final calculation of the target parameter, streamlining the overall process.
Solution Approach 2:
The patent transforms physical measurements (geometry dimensions, mass) into calculated parameters (volumes, heights, depths) through mathematical relationships. This parameter transformation allows efficient calculation of the target parameter from readily obtainable measurements.
3Manufacturing precision
If direct measurement of parameters is performed without test patterns, then manufacturing precision is improved, but measurement capability is reduced
Solution Approach 1:
The patent extracts the measurement of interest (conductive pattern height or depth) from the overall structure by separately measuring the recess region and the conductive pattern, then calculating the difference. This extraction method eliminates the need for separate test patterns while maintaining measurement capability.
Solution Approach 2:
The patent replaces direct physical measurement of the target parameter with an indirect measurement system using mass measurement and geometric calculation. This substitution enables precise measurement of difficult-to-access parameters (such as conductive pattern depth) that would be challenging to measure directly.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances measurement reliability and reduces processing time, allowing for precise measurement of semiconductor devices and improving the fabrication process by directly measuring parameters without test patterns, thus improving the overall reliability of semiconductor devices.
Implementation Method 1
obtaining, using a first measurement instrument, first measurement data from a recess region formed in a semiconductor substrate
Implementation Method 2
obtaining, using a second measurement instrument, second measurement data from a conductive pattern filling a portion of the recess region
Data Source
AI summary
The measurement method may include obtaining first measurement data from a recess region formed in a semiconductor substrate, obtaining second measurement data from a conductive pattern filling a portion of the recess region, calculating a first volume of the recess region from the first measurement data, calculating a second volume of the conductive pattern from the second measurement data, and calculating a measurement target parameter using a difference between the first and second volumes.