Semiconductor Device Recess Pattern Resin Flow
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Solution Overview
Problem
Conventional semiconductor devices experience reliability and insulation property degradation due to air bubbles trapped in the resin during the sealing process, which complicates manufacturing and increases costs when attempting to improve resin flowability.
Innovation Solution
A semiconductor device configuration featuring a conductive layer with a recess pattern along the gap between semiconductor elements, allowing resin to flow through a large tunnel-like space and preventing air bubbles from forming, thus maintaining reliability and insulation properties without additional process steps or cost increases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor elements are arranged adjacent to each other on a conductive layer, then device integration is achieved, but resin flowability degrades and air bubbles remain in the gaps
Solution Approach 1:
The conductive layer is segmented by forming recess patterns (grooves) that divide the gap region into multiple flow paths. This segmentation allows resin to flow more effectively through the gap between adjacent semiconductor elements, preventing air bubble entrapment while maintaining the adjacent arrangement of elements for device integration.
Solution Approach 2:
The recess patterns create a three-dimensional flow path structure within the conductive layer, transforming the two-dimensional gap space into a multi-level tunnel-like structure. This dimensional change provides additional flow channels that facilitate resin penetration and air bubble evacuation during the sealing process.
2Reliability
If resin is injected in a decompressed atmosphere or heated to improve flowability, then air bubbles can be prevented, but facility cost increases and process steps become complicated
Solution Approach 1:
The recess patterns in the conductive layer create self-driven flow paths that guide resin naturally through the gap between semiconductor elements during normal injection conditions. The structure itself provides the flow enhancement function without requiring external decompression systems or heating apparatus, eliminating additional process steps and facility costs.
Solution Approach 2:
The recess patterns act as an intermediary structure within the conductive layer that mediates between the resin injection process and the gap region. These patterns create controlled flow channels that facilitate resin penetration and air bubble removal under standard injection conditions, replacing the need for extreme measures like decompression or heating.
3Area of stationary object
If a narrow gap is created between adjacent semiconductor elements, then space efficiency is improved, but resin flowability degrades causing air bubbles
Solution Approach 1:
The recess patterns segment the narrow gap space into multiple controlled flow channels, allowing resin to navigate the limited space efficiently. This segmentation maintains the compact adjacent arrangement of semiconductor elements while providing sufficient flow paths for complete resin penetration and air bubble evacuation.
Solution Approach 2:
The recess patterns introduce vertical dimensionality into the horizontal gap space, creating tunnel-like three-dimensional flow paths. This transforms the limited two-dimensional narrow gap into a multi-level flow structure that maintains space efficiency while providing adequate flow capacity for resin injection without air bubble entrapment.
Data Source
AI summary
A semiconductor device according to the present invention includes the following: a conductive layer disposed on an insulating substrate; a first semiconductor element and a second semiconductor element that are joined on an opposite surface of the conductive layer opposite from the insulating substrate, with a gap the first semiconductor element and the second semiconductor element; an electrode joined on an opposite surface of the first semiconductor element opposite from the conductive layer, and an opposite surface of the second semiconductor element opposite from the conductive layer, so as to extend over the gap; and resin sealing the conductive layer, the first semiconductor element, the second semiconductor element, and the electrode. The conductive layer has a recess pattern that is disposed on a surface being opposite from the insulating substrate and facing the gap, the recess pattern extending along the gap.