Semiconductor Recess Filling via Front-Back Temperature Gradient
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Solution Overview
Problem
Existing semiconductor device manufacturing processes face challenges in forming uniform films within recesses on substrates, as gases used in film formation tend to accumulate more on the peripheral sides rather than the bottom, leading to incomplete filling and difficulty in removing residues.
Innovation Solution
A substrate processing apparatus generates a temperature difference between the front and back surfaces of the substrate during film formation, using heaters and lamps to control gas flow and promote gas distribution into recesses, ensuring uniform film deposition and efficient residue removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If gas is supplied to form a film on substrate surface, then film formation is achieved, but gas accumulates on peripheral sides rather than bottom of recesses leading to incomplete filling
Solution Approach 1:
The patent applies parameter changes by controlling the temperature difference between the front and back surfaces of the substrate. By heating the back surface to a higher temperature than the front surface during specific process stages, the gas flow characteristics are modified to enhance gas penetration into recesses and improve filling uniformity, directly addressing the gas distribution problem
2Manufacturing precision
If conventional film formation process is used, then film is deposited on substrate, but residues accumulate in recesses and are difficult to remove
Solution Approach 1:
The patent implements periodic action through cyclic alternation between heating and non-heating periods, and between supplying gas and vacuum-exhausting. This periodic control of temperature difference and gas flow creates dynamic conditions that prevent residue accumulation and facilitate its removal, while maintaining film deposition quality
Solution Approach 2:
By dynamically changing the temperature parameter (creating temperature difference between surfaces) and pressure parameter (vacuum cycling), the patent modifies the gas flow patterns to enable effective residue removal from recesses while maintaining film deposition quality
3Manufacturing precision
If temperature difference is generated between front and back surfaces, then gas flow into recesses is improved, but additional heating control complexity is introduced
Solution Approach 1:
The patent applies local quality by creating a localized temperature difference specifically at the back surface of the substrate while keeping the front surface at a different temperature. This localized thermal control targets the specific problem area (gas distribution into recesses) without requiring complex system-wide temperature control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the filling characteristics of films within recesses and facilitates the discharge of residues, resulting in more complete and uniform film formation on semiconductor substrates.
Implementation Method 1
generating a predetermined temperature difference between a front surface of the substrate and a back surface of the substrate
Implementation Method 2
promote gas distribution into recesses
Implementation Method 3
vacuum-exhausting an inner atmosphere of the process chamber
Implementation Method 4
forming a film by performing a cycle a predetermined number of times, the cycle including: supplying a gas to a substrate
Data Source
AI summary
Described herein is a technique capable of forming a film so as to fill an inside of a recess provided on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a film by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a gas to a substrate in a process chamber; and (a-2) vacuum-exhausting an inner atmosphere of the process chamber; and (b) generating a predetermined temperature difference between a front surface of the substrate and a back surface of the substrate at a predetermined timing during (a).