Semiconductor Structure Recesses Enhance Trace Bonding

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Solution Overview

Problem

Bump-on-Trace (BOT) semiconductor structures face challenges with peeling off of metal traces due to thermal expansion mismatch and reduced bonding forces as bump pitches become finer, leading to reliability issues.

Innovation Solution

A semiconductor structure with a recess portion filled with conductive material underlying the conductive trace, enhancing the bonding force between the trace and the substrate, and using conductive pillars for both electrical and mechanical connections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If BOT structures are used to reduce chip area and manufacturing cost, then integration density improves and cost decreases, but metal traces peel off from the package substrate due to thermal expansion mismatch and reduced bonding forces

Engineering Contradiction:
Improveintegration densityVSAvoidbonding force between metal traces and substrate
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent introduces a recess portion that extends downward from the substrate surface, transforming a two-dimensional surface bonding problem into a three-dimensional embedded structure. This vertical dimension provides additional bonding area and mechanical interlocking, preventing trace peeling while maintaining the BOT structure's area efficiency

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The conductive trace is nested within the recess portion of the substrate, creating a hierarchical structure where the trace is embedded in the substrate rather than merely surface-mounted. This nesting provides mechanical support and enhances bonding without requiring additional external components

Inventive Principle:
Principle #7Nested doll (Nesting)

2Area of moving object

If bump pitch is reduced to increase integration density, then more components fit on the chip, but bonding force between conductive traces and package substrate decreases causing trace peeling

Engineering Contradiction:
Improvechip area requirementVSAvoidbonding force between conductive traces and substrate
Core Design Contradiction:
Area of moving objectVSStrength

Solution Approach 1:

By creating recess portions that extend vertically into the substrate, the patent compensates for the reduced horizontal bonding area available at finer bump pitches. The vertical depth of the recess provides additional bonding surface area, maintaining adequate bonding strength even when horizontal dimensions are minimized

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The recess portions are strategically positioned at specific locations where bonding is critical, concentrating enhanced bonding strength where needed rather than uniformly increasing substrate thickness. This allows fine pitch dimensions elsewhere while maintaining local bonding strength at bump locations

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If conventional BOT structures are used without recess portions, then manufacturing is simpler, but thermal expansion mismatch causes stress on metal traces leading to peeling

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidstress on metal traces from thermal expansion mismatch
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The recess portions are pre-formed in the substrate before trace deposition, creating a stress-absorbing structure in advance. This pre-prepared geometry provides compliance and stress distribution pathways that cushion against thermal expansion forces before they can cause trace peeling

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The patent modifies the substrate geometry parameter by introducing controlled recesses, changing the mechanical compliance and stress distribution characteristics. This geometric parameter change allows the substrate to better accommodate thermal expansion forces without compromising manufacturing feasibility

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10163768B2Semiconductor structure and method of manufacturing the same
Publication Date: 2018.12.25 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US10163768B2 patent drawing
  • US10163768B2 patent drawing
  • US10163768B2 patent drawing

AI summary

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a substrate comprising a recess portion filled with a conductive material; a conductive trace overlying and contacting the conductive material; a conductive pillar disposed on the conductive trace and over the recess portion of the substrate; and a semiconductor chip disposed on the conductive pillar.