Semiconductor Recessed Chamber Fluid Flow Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor wafer cleaning techniques require large amounts of ultrapure chemicals, leading to high costs and environmental impact, and lack precise control over fluid flow, resulting in inconsistent processing results.
Innovation Solution
A semiconductor processing apparatus with a recessed design that includes sloped surfaces and strategically positioned channels for fluid inlet and outlet, allowing for controlled fluid flow direction and speed to ensure uniform processing and minimize residue on the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If wet cleaning techniques are used to clean substrate surfaces, then cleaning effectiveness is improved, but chemical consumption increases and environmental impact worsens
Solution Approach 1:
The patent changes the physical state parameter of the cleaning medium from liquid to gas (vapor phase), and controls temperature parameters to achieve effective cleaning with minimal chemical consumption. The vapor phase cleaning allows chemicals to condense on the substrate surface and then evaporate completely, eliminating liquid waste.
Solution Approach 2:
The patent utilizes phase transitions of water and cleaning chemicals between vapor and liquid states. The cleaning medium is introduced as vapor, condenses on the substrate surface to perform cleaning, then re-evaporates for complete removal without residue or waste. This phase transition cycle enables effective cleaning with minimal chemical consumption.
2Area of stationary object
If conventional fluid spraying methods are used for substrate cleaning, then cleaning coverage is improved, but fluid flow control precision deteriorates
Solution Approach 1:
The patent uses controlled vapor flow through a chamber environment rather than direct spraying. The vapor phase cleaning medium flows uniformly across the substrate surface area, providing consistent coverage while allowing precise control of flow rate and residence time, thereby improving both coverage and flow control precision.
3Manufacturing precision
If multiple rounds of cleaning steps are performed to remove micro contaminants, then substrate surface quality is improved, but processing time increases
Solution Approach 1:
The patent implements continuous vapor phase cleaning where the cleaning medium continuously flows across the substrate surface in a controlled chamber environment. This continuous action allows for thorough contaminant removal in a single integrated process step, eliminating the need for multiple discrete cleaning rounds and reducing total processing time while maintaining high surface quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves precise control over fluid flow and chemical reactions, reducing chemical consumption, minimizing environmental impact, and ensuring consistent and efficient semiconductor wafer processing with reduced residue.
Implementation Method 1
A bottom surface of the recess has at least one location and a peripheral. The bottom surface ascends from the at least one location toward the peripheral against a direction of gravity or descends from the at least one location toward the peripheral following the direction of gravity
Data Source
AI summary
A semiconductor processing apparatus is provided. The apparatus includes a body portion, which includes at least one semiconductor processing unit. Each semiconductor processing unit includes a recess formed on an upper surface of the body portion, wherein a bottom surface of the recess has at least one location and a peripheral. The bottom surface ascends from the at least one location toward the peripheral against a direction of gravity or descends from the at least one location toward the peripheral following the direction of gravity. Each semiconductor processing unit also includes a first channel that connects to the recess at the at least one location, as well as at least one second channel connecting to the recess at the peripheral. Each of the first channel and the at least one second channel serves as an inlet or an outlet via which a fluid enters or exits the recess. A method according to the present disclosure may control a flowing direction of a fluid flowing across a substrate surface. When the fluid flow as programmed, the fluid may contact the substrate surface and process the surface via various physical and/or chemical reactions.