Semiconductor Rectifier Reducing Power Loss via Tunnel Diode Junction
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Solution Overview
Problem
Conventional power rectifiers with P-N junctions experience significant power loss and heat dissipation due to the 600 mV voltage drop, which becomes a concern for modern electronic devices using lower voltage power supplies and high current systems.
Innovation Solution
A semiconductor rectifier device with a first, second, and third semiconductor region, along with a gate, where the gate is insulated from the second semiconductor region and electrically coupled to the third, allowing for the formation of an inversion region that functions as a forward-biased tunnel diode or reverse-biased diode, reducing power loss by minimizing voltage drop.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional P-N junction rectifiers are used, then the device structure is simple, but significant power loss and heat dissipation occur due to 600 mV voltage drop
Solution Approach 1:
The rectifier device is segmented into multiple semiconductor regions (first, second, and third regions with different conductivity types and dopant concentrations) instead of a simple P-N junction. This segmentation allows the formation of an inversion region that functions as a tunnel diode junction, reducing the forward voltage drop from 600 mV to nearly 0 V and thereby significantly reducing power loss.
Solution Approach 2:
Different semiconductor regions are doped with different dopant concentrations (first dopant concentration in the first region, second dopant concentration in the second region, and third dopant concentration greater than the second in the third region). This local variation in dopant concentration creates the inversion region that enables low-voltage operation while maintaining structural integrity.
2Loss of energy
If conventional P-N junction rectifiers are used, then the manufacturing process is simple, but the voltage drop causes significant power dissipation in high current systems
Solution Approach 1:
The gate structure is preliminarily configured to be proximate to but insulated from the second semiconductor region and electrically coupled to the third semiconductor region. This preliminary arrangement enables the gate to control the formation of the inversion region, allowing the device to function as a tunnel diode in forward bias and reducing power dissipation before the actual rectification operation begins.
Solution Approach 2:
The gate acts as an intermediary element that controls the electrical behavior of the third semiconductor region. By being insulated from the second region but electrically coupled to the third, the gate mediates the formation of the inversion region, enabling precise control over the tunnel diode junction and reducing power dissipation without requiring complex external control circuits.
3Use of energy by moving object
If conventional rectifiers are used in low voltage power supply systems, then the design is straightforward, but the 600 mV voltage drop becomes a significant portion of the supply voltage
Solution Approach 1:
The invention changes the electrical parameters of the rectifier by creating regions with different dopant concentrations (first, second, and third concentrations where the third is greater than the second). This parameter variation enables the inversion region to form a tunnel diode junction with nearly 0 V forward voltage drop, dramatically improving energy efficiency in low voltage systems where the 600 mV drop of conventional rectifiers would be a significant portion of the supply voltage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces power dissipation and improves efficiency by allowing the rectifier to operate with lower forward bias voltage, enhancing performance in high-power systems and low-voltage applications.
Implementation Method 1
The inversion region forms a forward-biased tunnel diode junction with the third semiconductor region
Implementation Method 2
the gate is proximate to but insulated from the second semiconductor region and electrically coupled to the third semiconductor region
Data Source
AI summary
In one embodiment the present invention includes a semiconductor rectifier device comprising a first, second, and third semiconductor regions and a gate. The first semiconductor region is of a first conductivity type. The second semiconductor region is adjacent to the first semiconductor region which has a second conductivity type. The third semiconductor region is adjacent to the second semiconductor region which has the second conductivity type. The gate is proximate to but insulated from the second semiconductor region and electrically coupled to the third semiconductor region. When the first semiconductor region is biased in a first direction, an inversion region forms in the second semiconductor region. The inversion region forms a forward-biased tunnel diode junction with the third semiconductor region. When the first semiconductor region is biased a second direction, the semiconductor rectifier device functions as a reverse-biased PIN diode.