Semiconductor Redistribution Structure for Lower IR Loss
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Solution Overview
Problem
The semiconductor industry faces challenges with increased IR losses in semiconductor devices due to resistive signal paths, which lead to thermal losses and instability in VCC levels, affecting device performance and accuracy.
Innovation Solution
The implementation of an adaptive redistribution structure with adjustable via structures allows for the maintenance of IR characteristics while enabling geometric adjustments between semiconductor chip connections, reducing resistive losses and improving signal integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but IR losses and thermal losses increase due to longer resistive signal paths
Solution Approach 1:
The patent segments the signal path into multiple shorter pathways by introducing additional via structures and conductive layers. Instead of a single long resistive path, the signal can travel through multiple segmented paths with lower individual resistance, thereby reducing total IR losses while maintaining high integration density
Solution Approach 2:
The patent utilizes three-dimensional redistribution structures with multiple conductive layers and via structures to create alternative signal pathways in the vertical dimension. This dimensional approach allows signals to bypass long horizontal resistive paths by traveling through stacked conductive layers, reducing IR losses without sacrificing integration density
2Quantity of substance
If the minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but stability of VCC levels deteriorates due to resistive losses
Solution Approach 1:
The power distribution network is segmented into multiple parallel pathways using additional via structures and conductive layers. This segmentation reduces the equivalent resistance of power paths, improving voltage stability and reducing VCC level fluctuations across the chip
Solution Approach 2:
The patent merges multiple conductive layers and via structures into a unified three-dimensional power distribution network. This combining of parallel conductive paths reduces overall resistance and improves power delivery stability, ensuring stable VCC levels throughout the high-density integrated circuit
3Ease of manufacture
If fixed via structures are used in the redistribution structure, then manufacturing is simplified, but adaptability to different connection geometries is reduced
Solution Approach 1:
The patent introduces adjustable via structures that can be dynamically positioned or configured during the manufacturing process. These via structures can be selectively formed or removed based on the specific geometric requirements of different chip connections, providing adaptability while maintaining a relatively simple base manufacturing process
Solution Approach 2:
The redistribution structure incorporates universal via structures that can serve multiple functions and adapt to different connection geometries. These multi-functional via structures can be configured to connect different layers and provide flexible routing options, enabling the same basic structure to accommodate various chip layouts and connection requirements
Data Source
AI summary
A method includes providing a semiconductor chip with a plurality of first connector structures disposed on a topmost one of a plurality of metallization layers. The method includes forming a redistribution structure comprising a plurality of conductive layers and a plurality of via structures, adjacent ones of the plurality of conductive layers being connected through at least a corresponding one of the plurality of via structures. The method includes bonding the plurality of first connector structures to the redistribution structure. The method includes bonding the redistribution structure to a carrier substrate through a plurality of second connector structures. Forming the redistribution structure includes laterally rotating a first one of the plurality of via structures around a second one of the plurality of via structures, the first via structure being vertically above the second via structure.