Semiconductor Structure With Redistribution Layers
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Solution Overview
Problem
The challenge in miniaturizing ultrasonic sensors lies in the long electrical transmission path between the piezoelectric array and the application-specific integrated circuit (ASIC) due to wire bonding and PCB routing, which hinders the miniaturization of semiconductor integrated circuits for ultrasonic sensing applications.
Innovation Solution
The use of redistribution layers and through vias to shorten the transmission path between the piezoelectric array and the ASIC, with a front side redistribution layer attached to the sensing element and a back side redistribution layer attached to the ASIC, electrically connected by the through via, allowing for a more compact semiconductor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If wire bonding and PCB routing are used to connect piezoelectric array and ASIC, then electrical connection is achieved, but transmission path length becomes too long
Solution Approach 1:
The patent merges the piezoelectric array and ASIC into a single integrated semiconductor structure, eliminating the need for separate wire bonding and PCB routing. The electrical connection is achieved through integrated conductive paths within the same substrate, reducing transmission path length while maintaining manufacturing feasibility through standardized semiconductor fabrication processes
Solution Approach 2:
The patent introduces a carrier substrate as an intermediary component that integrates both the piezoelectric array and ASIC. This carrier serves as a common platform that provides electrical interconnection through integrated trace routing, eliminating the need for external wire bonding and reducing the transmission path between the two components
2Adaptability or versatility
If multiple layouts for piezoelectric array to ASIC connection are used, then connection flexibility is improved, but device complexity increases
Solution Approach 1:
The carrier substrate is designed with universal electrical interconnection capabilities that can accommodate different piezoelectric array configurations and ASIC types. The integrated trace routing provides multiple connection paths and routing options within a single standardized platform, eliminating the need for multiple specialized layout designs while maintaining connection flexibility
3Reliability
If wire bond mold is used for connection, then electrical connection is achieved, but gap between cover layer and sensor increases
Solution Approach 1:
The patent merges the electrical connection function into the integrated semiconductor structure itself, eliminating the need for a separate wire bond mold. The carrier substrate provides both mechanical support and electrical interconnection in a single integrated component, reducing the overall height and eliminating the gap between the cover layer and sensor that would be required to accommodate a wire bond mold
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances sensitivity by reducing the transmission path length to approximately 20 μm, enabling more compact and efficient ultrasonic sensing semiconductor structures.
Implementation Method 1
a sensing element configured to receive a signal from a sensing target
Data Source
AI summary
The present disclosure provides a semiconductor structure includes a sensing element configured to receive a signal from a sensing target, a molding surrounding the sensing element, a through via in the molding, a front side redistribution layer disposed at a front side of the sensing element and electrically connected thereto, and a back side redistribution layer disposed at a back side of the sensing element, the front side redistribution layer and the back side redistribution layer are electrically connected by the through via. The present disclosure also provides a method for manufacturing the semiconductor structure described herein.


