Semiconductor Redistributing Traces Adhesion
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Solution Overview
Problem
In semiconductor device manufacturing, reducing the pitch of redistribution traces to 10 um or less leads to decreased adhesion between resist patterns and the underlying base, resulting in resist stripping during development.
Innovation Solution
A surface modifying layer is formed on the metal film to improve adhesion with the resist pattern, and the resist film is designed with an absorbance of 80% or less to prevent excessive curing and stripping, using a combination of materials like polyimide resin and Cu oxide films to enhance adhesion and prevent resist stripping.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the pitch of redistribution traces is reduced to 10 um or less, then the integration capacity and operation speed are improved, but the adhesion between resist pattern and base decreases causing resist stripping
Solution Approach 1:
A surface modifying layer is introduced as an intermediary between the metal film and the resist pattern. This layer has a specific composition ratio (Al: 5-20 at%, Ti: 5-20 at%, Cr: 5-20 at%, Cu: 50-85 at%) that provides both good adhesion to the metal film and excellent adhesion to the resist pattern, preventing resist stripping while enabling fine pitch redistribution traces of 10 um or less
Solution Approach 2:
The adhesion properties are improved by changing the compositional parameters of the surface modifying layer. By controlling the atomic percentages of Al, Ti, Cr, and Cu within specific ranges, the layer achieves optimal adhesion characteristics that prevent resist stripping at fine pitches while maintaining electrical performance
2Quantity of substance
If the pitch of redistribution traces is reduced, then the capacity increase is achieved, but resist stripping occurs during development
Solution Approach 1:
The surface modifying layer serves as a mediator that ensures the resist pattern maintains its integrity during development even at reduced pitches. The layer's specific composition provides uniform adhesion that prevents resist stripping, enabling accurate formation of fine redistribution traces with capacity increase
3Reliability
If a surface modifying layer is added to improve adhesion, then resist stripping is prevented, but the device complexity increases
Solution Approach 1:
Instead of adding multiple separate functional layers, the solution changes the compositional parameters of a single surface modifying layer. By controlling the atomic percentages of Al, Ti, Cr, and Cu within specific ranges, the layer simultaneously provides adhesion to both the metal film and resist pattern, preventing resist stripping without increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents resist stripping even at small resist widths and half pitches, ensuring reliable formation of redistribution traces and maintaining the integrity of the semiconductor device.
Implementation Method 1
The surface modifying layer is formed on a surface layer of the metal film and improves the adhesion with a resist pattern
Implementation Method 2
the resist film is designed with an absorbance of 80% or less to prevent excessive curing and stripping
Data Source
AI summary
According to one embodiment, a semiconductor substrate, a metal film, a surface modifying layer, and a redistribution trace are provided. On the semiconductor substrate, a wire and a pad electrode are formed. The metal film is formed over the semiconductor substrate. The surface modifying layer is formed on a surface layer of the metal film and improves the adhesion with a resist pattern. The redistribution trace is formed on the metal film via the surface modifying layer.