Semiconductor Reflectance Thermometry Using Band-Gap Spectral Features
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Solution Overview
Problem
Current non-contact temperature measurement techniques for semiconductor materials face challenges such as poor accuracy, repeatability, and inability to measure low temperatures effectively, especially due to interference from processing systems and environmental factors.
Innovation Solution
A system utilizing a light source, sensor, and processing circuits to determine the temperature of semiconductor materials by identifying spectral features above the band gap energy level in reflectance spectra, providing accurate and repeatable measurements across a broad temperature range without physical contact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If traditional non-contact temperature measurement techniques are used, then temperature measurement can be performed without physical contact, but measurement accuracy and repeatability are poor
Solution Approach 1:
The patent changes the measurement parameter from intensity-based temperature detection to wavelength-based spectral feature detection. By tracking the position of spectral features (peaks) in the reflectance spectrum rather than relying on intensity variations, the system achieves superior temperature measurement accuracy and repeatability. The wavelength position of spectral features shifts predictably with temperature, providing a more reliable measurement parameter.
Solution Approach 2:
The patent transitions from one-dimensional intensity measurement to two-dimensional spectral analysis by examining the wavelength spectrum. Instead of measuring temperature through a single intensity value, the system analyzes the entire spectral profile and tracks the position of specific spectral features across the wavelength dimension, thereby achieving more precise and repeatable measurements.
2Temperature
If traditional non-contact temperature measurement techniques are used, then temperature measurement is possible, but inability to measure low temperatures effectively
Solution Approach 1:
The patent employs wavelength-position-based spectral feature tracking which remains effective across a broad temperature range including low temperatures. Unlike intensity-based methods that lose sensitivity at low temperatures, the wavelength shift of spectral features provides consistent measurement precision regardless of temperature level, enabling effective low temperature measurement.
3Measurement precision
If traditional non-contact temperature measurement techniques are used, then temperature measurement can be performed, but poor accuracy due to interference from processing systems and environmental factors
Solution Approach 1:
The patent measures the wavelength position of spectral features rather than light intensity. Wavelength position is inherently more resistant to environmental interference such as variations in light source intensity, detector sensitivity drift, and ambient conditions. This parameter change eliminates many sources of measurement error that plague traditional intensity-based methods.
Solution Approach 2:
The system uses the known relationship between spectral feature wavelength position and temperature as a reference framework. By comparing measured spectral feature positions against calibrated reference data, the system can compensate for environmental variations and maintain high measurement accuracy despite external interference.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables precise and repeatable temperature measurement of semiconductor materials, including at low temperatures, by tracking sharp spectral features in reflectance data, reducing sensitivity to environmental and system variations, and improving measurement accuracy compared to traditional methods.
Implementation Method 1
reflecting light from a target semiconductor material, generating data including a reflectance spectrum responsive to acquiring the light reflected form the target semiconductor material
Implementation Method 2
processing the data to identify a location of a spectral feature within the reflectance spectrum that is indicative of a temperature of the target semiconductor material, wherein the location of the spectral feature is at an energy level that is above a band gap energy level of the target semiconductor material
Data Source
AI summary
Systems and methods for non-contact semiconductor temperature measurement involve reflecting light from a target semiconductor material. The reflected light is then used to identify a location of a spectral feature at an energy level that is above a band gap energy level of the target semiconductor material. The location of the spectral feature at the energy level that is above the band gap energy level of the target semiconductor material is used to determine the temperature of the target semiconductor material.