Semiconductor Device Reflective Layer Photon Absorption

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Solution Overview

Problem

Conventional semiconductor devices experience reduced light conversion efficiency due to photons of light being transmitted through the depletion region without being absorbed.

Innovation Solution

A semiconductor device structure is introduced, featuring a substrate, multiple semiconductor layers, and a reflective layer, where the reflective layer is positioned to reflect photons not absorbed by the depletion region, increasing the amount of light absorbed and converted into an electrical signal.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If photons are transmitted through the depletion region without absorption, then the device structure remains simple, but light conversion efficiency deteriorates

Engineering Contradiction:
Improvelight conversion efficiencyVSAvoiddevice structure
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent converts the harmful effect of transmitted photons (which would otherwise be lost) into a beneficial effect by using a reflective layer to redirect these photons back into the depletion region for absorption, thereby improving light conversion efficiency without fundamentally changing the device's basic structure

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

A reflective layer is introduced as an intermediary component between the depletion region and the substrate. This intermediary redirects transmitted photons back into the depletion region, enabling secondary absorption opportunities and improving overall light conversion efficiency

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If a reflective layer is added to absorb transmitted photons, then light conversion efficiency improves, but device complexity increases

Engineering Contradiction:
Improvelight conversion efficiencyVSAvoidstructure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The reflective layer converts the waste photons (which transmitted through without being absorbed) into useful photons that can be absorbed a second time, turning a loss into a gain for light conversion efficiency

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Solution Approach 2:

The patent modifies the optical parameters of the device by introducing a reflective layer with specific reflectivity characteristics, changing the photon trajectory and absorption probability without fundamentally altering the semiconductor layer structure

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The semiconductor device enhances light conversion efficiency by ensuring that more incident photons are absorbed by the depletion region, thereby improving the overall performance of light receiving devices.

Implementation Method 1

a reflective layer disposed on the third semiconductor layer, wherein a part between the first and second semiconductor layers, a part between the third and second semiconductor layers, and the second semiconductor layer form a depletion region

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 2

Light receiving devices using a semiconductor convert electromagnetic energy into electrical energy using the photoelectric effect generated by the semiconductor

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentUS10971655B2Semiconductor device
Publication Date: 2021.04.06 LG INNOTEK CO LTD
  • US10971655B2 patent drawing
  • US10971655B2 patent drawing

AI summary

One embodiment provides a semiconductor device comprising: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the first semiconductor layer; a third semiconductor layer disposed on the second semiconductor layer; and a reflective layer disposed on the third semiconductor layer, wherein the part between the first and second semiconductor layers, the part between the third and second semiconductor layers, and the second semiconductor layer comprise a depletion region, and the conductivity of the first semiconductor layer and the conductivity of the third semiconductor layer are different from each other, and the second semiconductor layer comprises an intrinsic semiconductor layer.