Semiconductor Device with Insulating Reflective Layers for Light Extraction
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Solution Overview
Problem
Semiconductor devices face challenges in improving light extraction efficiency, electrical characteristics, bonding strength between package electrodes, and preventing current concentration and degradation of the package body due to emitted light.
Innovation Solution
A semiconductor device design featuring a light emitting structure with specific conductivity type semiconductor layers, electrodes, insulating reflective layers, and bonding pads, where the bonding pads' area is optimized to be between 30% to 70% of the total surface area, with controlled spacing and orientation to enhance light transmission and emission in multiple directions, and improve flip chip bonding processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If bonding pads are made larger to improve bonding strength and electrical characteristics, then bonding strength and electrical characteristics are improved, but light extraction efficiency deteriorates due to increased light absorption by bonding pads
Solution Approach 1:
The patent applies local quality by creating different functional zones on the semiconductor device surface. The center region is optimized for light emission with high extractive power, while the peripheral region contains bonding pads optimized for electrical connection and bonding. This spatial differentiation allows each region to specialize in its primary function without compromising the other.
Solution Approach 2:
The patent transitions from a two-dimensional planar arrangement to a three-dimensional structured approach by forming protrusions that extend from the semiconductor device surface. These protrusions create vertical differentiation, with light emitting portions at the center and bonding pads positioned at peripheral regions, adding a dimensional aspect to the layout optimization.
2Loss of energy
If bonding pads are made smaller to improve light extraction efficiency, then light extraction efficiency is improved, but bonding strength and electrical characteristics deteriorate
Solution Approach 1:
The patent applies local quality by creating different functional zones on the semiconductor device surface. The center region is optimized for light emission with high extractive power, while the peripheral region contains bonding pads optimized for electrical connection and bonding. This spatial differentiation allows each region to specialize in its primary function without compromising the other.
Solution Approach 2:
The patent transitions from a two-dimensional planar arrangement to a three-dimensional structured approach by forming protrusions that extend from the semiconductor device surface. These protrusions create vertical differentiation, with light emitting portions at the center and bonding pads positioned at peripheral regions, adding a dimensional aspect to the layout optimization.
3Illumination intensity
If emitte light is increased to improve light intensity, then light intensity is improved, but package body degradation worsens due to increased light exposure
Solution Approach 1:
The patent converts the potentially harmful effect of emitted light on the package body into a beneficial outcome by strategically positioning light blocking structures. These structures redirect and concentrate light toward extraction paths while simultaneously protecting the package body from excessive light exposure, thus transforming light from a harmful factor into a controlled resource that enhances light intensity without causing degradation.
Solution Approach 2:
The patent introduces light blocking structures as intermediary elements between the light emitting portions and the package body. These intermediaries selectively block harmful light exposure to the package body while allowing useful light to be extracted and directed toward the intended output path, thus mediating the interaction between light and package materials.
4Reliability
If current density is increased to improve electrical characteristics, then electrical characteristics are improved, but current concentration worsens leading to device degradation
Solution Approach 1:
The patent applies segmentation by dividing the current path into multiple regions through the protrusion structure. The current spreading layer is configured to distribute current across different segments of the semiconductor device, preventing localized current concentration while maintaining overall electrical performance. This segmentation approach allows current to be distributed more evenly throughout the device structure.
Solution Approach 2:
The patent transitions from a two-dimensional planar current distribution to a three-dimensional current spreading approach by utilizing the vertical structure of protrusions. This dimensional change allows current to spread through multiple layers and paths, reducing current density concentration at any single point while maintaining effective electrical characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances light extraction efficiency, electrical characteristics, and bonding strength, while preventing current concentration and package degradation, leading to improved reliability and light intensity.
Implementation Method 1
a first insulating reflective layer disposed on the first electrode and the second electrode, and comprising a first opening exposing an upper surface of the first electrode; a second insulating reflective layer disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer
Data Source
AI summary
A semiconductor device according to an embodiment may include a light emitting structure, a first electrode, a second electrode, a first insulating reflective layer, a second insulating reflective layer, a first bonding pad, and a second bonding pad. The light emitting structure may include a first conductivity type semiconductor layer and a second conductivity type semiconductor layer. The first insulating reflective layer may be disposed on the first electrode and the second electrode, and may include a first opening exposing an upper surface of the first electrode. The second insulating reflective layer may be disposed on the first electrode and the second electrode, and disposed spaced apart from the first insulating reflective layer, and may include a second opening exposing an upper surface of the second electrode. The first bonding pad may be electrically connected to the first electrode through the first opening. The second bonding pad may be electrically connected to the second electrode through the second opening.