Removable Thermal Insulation for Semiconductor Reflow Heat Protection
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Solution Overview
Problem
Non-volatile semiconductor memory devices are vulnerable to heat during the reflow step in the mounting process, and existing solutions with thermal insulation regions pose challenges for miniaturization and design flexibility due to the residual insulation material.
Innovation Solution
A method involving the use of an adhesive thermal insulation material that adheres to the semiconductor device during the reflow step and can be easily detached afterward, with specific adhesive strength characteristics to ensure effective heat protection and easy removal, utilizing a matrix polymer and thermally expandable hollow particles for enhanced detachment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a thermal insulation region is integrated into the semiconductor device structure, then heat protection during reflow is improved, but device miniaturization and design flexibility are hindered due to residual insulation material
Solution Approach 1:
The thermal insulation function is extracted from the device structure and implemented as a separate removable material applied temporarily during reflow. This allows heat protection without permanently integrating insulation regions that would consume device volume and limit miniaturization.
Solution Approach 2:
The thermal insulation material is applied to the device surface before the reflow process begins. This preliminary action provides heat protection during the critical reflow step, and the material is then removed afterward, avoiding permanent structural changes that would hinder design flexibility.
2Object-affected harmful factors
If a thermal insulation material is applied during reflow, then heat protection is improved, but the material must remain adherent during reflow and allow easy detachment afterward
Solution Approach 1:
The adhesive strength of the thermal insulation material is made dynamic rather than static. The material exhibits temperature-dependent adhesion: strong adhesion at reflow temperatures to provide heat protection, and reduced adhesion at lower temperatures to enable easy detachment. This dynamic property resolves the contradiction between maintaining adhesion during processing and facilitating removal afterward.
Solution Approach 2:
The adhesive strength parameter of the thermal insulation material is changed as a function of temperature. The material is designed to have high adhesive strength at reflow temperatures (around 260°C) and lower adhesive strength at room temperature, allowing it to stay attached during heat treatment but detach easily after cooling.
3Strength
If the adhesive strength is high at all temperatures, then heat protection is maintained, but detachment becomes difficult
Solution Approach 1:
The adhesive strength is made temperature-dependent rather than constant. The material exhibits high adhesive strength at reflow temperatures to maintain heat protection, but the adhesive strength decreases at lower temperatures to facilitate easy detachment. This dynamic behavior resolves the contradiction between maintaining strong adhesion and enabling easy removal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively protects semiconductor devices from heat during the reflow step while allowing for easy detachment of the insulation material, addressing the limitations of residual insulation in existing technologies and enhancing miniaturization and design flexibility.
Implementation Method 1
a step of disposing an adhesive thermal insulation material on a semiconductor device; a step of performing reflow of the semiconductor device having the thermal insulation material disposed thereon
Implementation Method 2
F1 represents the adhesive strength of the thermal insulation material after heating the thermal insulation material at 220° C. for 120 seconds, and F2 represents the adhesive strength of the thermal insulation material after heating the thermal insulation material at 260° C. for 30 seconds
Implementation Method 3
The thermal insulation material may contain a matrix polymer and thermally expandable hollow particles. In this case, as the thermally expandable hollow particles expand during the reflow step, the interface adherence between the thermal insulation material and the semiconductor device may be decreased after the reflow step
Data Source
AI summary
A method for manufacturing a semiconductor device, the method including: a step of disposing an adhesive thermal insulation material on a semiconductor device; a step of performing reflow of the semiconductor device having the thermal insulation material disposed thereon; and a step of detaching the thermal insulation material from the semiconductor device.