Semiconductor Regrowth via In-Situ Etching Gas Treatment
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing method of manufacturing semiconductor devices using insulative-film masks and regrowth processing results in convex portions on the surface due to selective growth effects, leading to dislocations and poor appearance, as well as exposure of the surface to the atmosphere during wet etching, compromising cleanliness.
Innovation Solution
A method where the convex portion is removed using an etching gas within the same manufacturing apparatus, followed by regrowth of the semiconductor layer, ensuring the surface remains clean and reducing the risk of dislocations by maintaining a controlled environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If wet etching is used to remove the convex portion, then the convex portion can be removed effectively, but the surface is exposed to the atmosphere causing contamination
Solution Approach 1:
The patent combines the convex portion removal step and the regrowth step into a single continuous process within the same manufacturing apparatus. By merging these steps and eliminating atmospheric exposure between them, the surface cleanliness is maintained while still achieving effective convex portion removal through etching gas treatment
2Reliability
If the surface is exposed to the atmosphere after wet etching, then the manufacturing process can be completed in separate apparatuses, but the surface cannot be kept in a clean state
Solution Approach 1:
The patent merges the etching apparatus and regrowth apparatus into a single integrated system, allowing the convex portion removal and subsequent regrowth to occur in sequence without atmospheric exposure. This integration ensures surface cleanliness is maintained while achieving the necessary manufacturing functions
Solution Approach 2:
The patent maintains an inert or controlled atmosphere environment within the manufacturing apparatus during the transition from etching to regrowth. By preventing atmospheric exposure, the surface remains clean and free from contamination that would occur in ambient conditions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the regrowth of semiconductor layers in a clean state, reducing dislocations and improving the appearance of semiconductor devices by maintaining a controlled environment throughout the process, while also reducing the number of manufacturing steps.
Implementation Method 1
a convex-portion removing step of removing the convex portion by supplying an etching gas thereto
Implementation Method 2
a regrown-layer forming step of supplying a material gas onto the semiconductor structure and the second semiconductor layer, to thereby form a regrown layer
Data Source
AI summary
What is provided here are: a step of forming a first semiconductor layer on a base member; a step of forming a mask on the first semiconductor layer; a step of etching the first semiconductor layer by using the mask, to thereby form a semiconductor structure; a step of forming a second semiconductor layer in a region abutting on a side surface of the semiconductor structure, said second semiconductor layer having a convex portion abutting to the mask; a convex-portion removing step of removing the convex portion by supplying an etching gas thereto; and a regrown-layer forming step of supplying a material gas onto the semiconductor structure and the second semiconductor layer, to thereby form a regrown layer; wherein the convex-portion removing step and the regrown-layer forming step are executed in a same manufacturing apparatus.