Semiconductor Package Reinforced Structure for Stress Mitigation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor device packages face performance and reliability issues due to residual stress caused by thermal cycling and coefficient of thermal expansion (CTE) mismatch during manufacturing.
Innovation Solution
The semiconductor device package includes a carrier, an electronic component, a buffer layer with low Young's modulus, and a reinforced structure, which are encapsulated by an encapsulant. The buffer layer and reinforced structure help mitigate residual stress by providing thermal and mechanical stability, using materials like die attach film (DAF) and dummy chips or dies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a semiconductor device is attached to a carrier and encapsulated, then the device is protected and encapsulated, but residual stress from thermal cycling and CTE mismatch adversely affects performance and reliability
Solution Approach 1:
A stress relief layer is introduced between the electronic component and the carrier as an intermediary element. This layer has a coefficient of thermal expansion (CTE) that is intermediate between the electronic component and the carrier, acting as a buffer to reduce the stress caused by CTE mismatch during thermal cycling. The stress relief layer absorbs and distributes the thermal expansion differences, preventing direct stress transmission to the electronic component.
Solution Approach 2:
The patent modifies the physical and chemical parameters of the materials used in the package structure. Specifically, it selects materials with carefully controlled CTE values, Young's modulus, and thickness to optimize stress distribution. The stress relief layer's CTE is engineered to be between that of the electronic component and carrier, and its thickness and material composition are adjusted to achieve the desired stress relief effect while maintaining electrical and mechanical performance.
2Adaptability or versatility
If materials with different CTE are used in the package structure, then each material can be optimized for its specific function, but CTE mismatch generates residual stress during thermal cycling
Solution Approach 1:
The patent systematically adjusts the CTE parameter of the stress relief layer to create a gradient effect. By selecting a material with intermediate CTE properties and optimizing its thickness, the structure creates a gradual transition in thermal expansion characteristics across the package layers. This parameter optimization allows each layer to maintain its functional advantages while the intermediate CTE of the stress relief layer prevents abrupt CTE transitions that would cause stress concentration.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively alleviates stress, ensuring the semiconductor device package's functionality and reliability by reducing the risk of crack formation, delamination, and maintaining performance despite thermal expansion mismatches.
Implementation Method 1
The buffer layer is disposed on the active area of the electronic component... a buffer layer with low Young's modulus... help mitigate residual stress by providing thermal and mechanical stability
Implementation Method 2
The encapsulant encapsulates the carrier, the electronic component and the reinforced structure
Data Source
AI summary
A semiconductor device package and a method for packaging the same are provided. A semiconductor device package includes a carrier, an electronic component, a buffer layer, a reinforced structure, and an encapsulant. The electronic component is disposed over the carrier and has an active area. The buffer layer is disposed on the active area of the electronic component. The reinforced structure is disposed on the buffer layer. The encapsulant encapsulates the carrier, the electronic component and the reinforced structure.