Semiconductor Reliability Evaluation via Cosmic Ray Leakage Current
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Solution Overview
Problem
The accelerated test for semiconductor device reliability evaluation requires a radiation producing apparatus and protection mechanisms, necessitating a need for a method to evaluate semiconductor device reliability in a short time without emitting artificial radiation.
Innovation Solution
A semiconductor device reliability evaluation apparatus that includes a DC power supply, current detection unit, measuring instrument, and analyzer to record and analyze pulse waveforms of leakage current, allowing for the estimation of Long Term DC bias Stability (LTDS) without artificial radiation exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If accelerated test with artificial radiation is used, then reliability evaluation time is reduced, but device complexity and safety requirements increase due to radiation producing apparatus and protection mechanisms
Solution Approach 1:
The patent extracts the radiation exposure step from the reliability evaluation process entirely. Instead of using artificial radiation to accelerate testing, the invention uses natural cosmic rays that are already present in the environment. This eliminates the need for radiation producing apparatus and associated protection mechanisms, thereby reducing device complexity while maintaining accelerated testing capabilities through the use of high-voltage bias conditions.
Solution Approach 2:
The patent introduces a high-voltage DC bias condition as an intermediary that enhances the sensitivity of semiconductor devices to natural cosmic ray exposure. By applying elevated DC voltage during testing, the device operates in a state where cosmic ray-induced effects are amplified, allowing reliable detection of LTDS characteristics without requiring artificial radiation sources. This intermediary approach enables accelerated testing using only simple measurement equipment.
2Measurement precision
If long-term observation method is used, then measurement accuracy is improved, but productivity decreases due to several hundred to several thousand hours test duration
Solution Approach 1:
The patent applies preliminary action by subjecting semiconductor devices to elevated DC voltage conditions before actual cosmic ray exposure occurs. This pre-conditioning of the devices with high voltage bias prepares them to exhibit enhanced sensitivity to cosmic ray effects, allowing LTDS characteristics to be detected much faster than under normal operating conditions. The preliminary voltage application creates a state where even minimal cosmic ray exposure produces measurable effects, achieving both accuracy and speed.
Solution Approach 2:
The patent changes the operating parameters of the semiconductor devices during testing by applying elevated DC voltage levels. This parameter change transforms the devices into a more sensitive state where cosmic ray-induced charge collection effects are amplified. By operating devices at higher voltages during testing compared to normal operation, the patent accelerates the manifestation of LTDS characteristics, reducing test duration from thousands of hours to much shorter periods while maintaining measurement accuracy.
3Object-affected harmful factors
If natural cosmic ray exposure method is used, then device safety is improved by eliminating radiation apparatus, but reliability evaluation time increases requiring several hundred to several thousand hours
Solution Approach 1:
The patent applies preliminary action by subjecting semiconductor devices to elevated DC voltage conditions before actual cosmic ray exposure occurs. This pre-conditioning of the devices with high voltage bias prepares them to exhibit enhanced sensitivity to cosmic ray effects, allowing LTDS characteristics to be detected much faster than under normal operating conditions. The preliminary voltage application creates a state where even minimal cosmic ray exposure produces measurable effects, achieving both accuracy and speed.
Solution Approach 2:
The patent changes the operating parameters of the semiconductor devices during testing by applying elevated DC voltage levels. This parameter change transforms the devices into a more sensitive state where cosmic ray-induced charge collection effects are amplified. By operating devices at higher voltages during testing compared to normal operation, the patent accelerates the manifestation of LTDS characteristics, reducing test duration from thousands of hours to much shorter periods while maintaining measurement accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables rapid evaluation of semiconductor device reliability, reducing the time and cost associated with lengthy observation methods, while accurately estimating LTDS without waiting for device destruction.
Implementation Method 1
a direct-current (DC) power supply to apply a DC voltage to at least one test semiconductor device
Implementation Method 2
a current detection unit to detect a leakage current of a test circuit in which the at least one test semiconductor device is included
Data Source
AI summary
A direct-current power supply applies a DC voltage to test semiconductor devices. A current detection unit detects a leakage current of a test circuit in which test semiconductor devices are included. A measuring instrument records a pulse waveform of the leakage current. An analyzer analyzes reliability of test semiconductor devices included in the test circuit based on the recorded pulse waveform.