Semiconductor Package Resin Opening Surface Treatment
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Solution Overview
Problem
High alignment precision and good contact between semiconductor devices and lines are required in mass production of semiconductor packages on large metal substrates, with existing methods facing challenges in residue removal and adhesiveness, which affect yield and reliability.
Innovation Solution
A manufacturing method involving plasma treatment and chemical treatment to remove residue from openings in the resin insulating layer, followed by electroless plating and electroplating to form conductive layers, ensuring precise alignment and improved contact resistance between semiconductor devices and lines.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional manufacturing methods are used to form conductive layers on resin insulating layers, then the manufacturing process is simple, but residue remains in openings which reduces alignment precision and contact quality
Solution Approach 1:
The patent applies preliminary action by performing plasma treatment and chemical treatment on the resin insulating layer before forming the conductive layer. These preliminary treatments remove residue from the openings and activate the surface, ensuring high alignment precision and contact quality when the conductive layer is subsequently formed. This pre-treatment approach resolves the contradiction by preparing the surface in advance to achieve high precision without requiring complex adjustments during the main manufacturing process.
Solution Approach 2:
The patent replaces conventional mechanical or simple chemical deposition methods with plasma treatment and chemical treatment processes. The plasma treatment uses ionized gas to physically and chemically modify the resin surface, while the chemical treatment uses specific solutions to remove residue. This substitution of treatment mechanisms achieves superior residue removal and surface activation, resolving the contradiction between manufacturing precision and process complexity by using advanced but well-established treatment technologies.
2Reliability
If multiple treatment steps are added to remove residue and improve adhesiveness, then alignment precision and contact quality improve, but manufacturing time and process complexity increase
Solution Approach 1:
The patent merges the residue removal function and surface activation function into a combined plasma treatment and chemical treatment process. The plasma treatment simultaneously removes organic contaminants and activates the surface for better adhesion, while the chemical treatment further cleans the openings. This merging of multiple functions into an integrated treatment sequence improves reliability without adding excessive time, as the treatments can be performed in a streamlined manner with minimal intermediate steps.
Solution Approach 2:
The patent optimizes the parameters of the plasma treatment and chemical treatment processes to achieve effective residue removal and surface activation within reasonable timeframes. By controlling plasma power, treatment duration, chemical solution concentration, and temperature, the process achieves high adhesiveness and contact reliability while minimizing the loss of manufacturing time. This parameter optimization resolves the contradiction by finding the optimal balance between treatment effectiveness and process efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances alignment precision and contact quality between semiconductor devices and lines, improving yield and reliability of semiconductor packages by efficiently removing residue and increasing adhesiveness.
Implementation Method 1
performing plasma treatment on a bottom surface of the opening
Implementation Method 2
performing chemical treatment on the bottom surface of the opening after the plasma treatment
Implementation Method 3
forming a conductive body to be connected with the external terminal exposed in the opening
Implementation Method 4
forming a conductive body to be connected with the external terminal exposed in the opening
Data Source
AI summary
A manufacturing method of a semiconductor package includes locating, on a substrate, a semiconductor device having an external terminal provided on a top surface thereof, forming a resin insulating layer covering the semiconductor device, forming an opening, exposing the external terminal, in the resin insulating layer, performing plasma treatment on a bottom surface of the opening, performing chemical treatment on the bottom surface of the opening after the plasma treatment, and forming a conductive body to be connected with the external terminal exposed in the opening.