Semiconductor Resin Layer Warping Control via Asymmetric Thermal Expansion

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Semiconductor devices face warping due to thermal shrinkage during the curing process, leading to potential damage of function elements, and existing methods to prevent warping either increase device thickness or compromise visibility of markings on the back side resin layer.

Innovation Solution

A semiconductor device with a front side resin layer and a thinner back side resin layer made of a material with a higher thermal expansion coefficient, which absorbs stress equally, and a back side resin layer with filler mixed in a specific range to reduce surface luster and enhance visibility of markings.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If a back side resin layer with the same thickness as the front side resin layer is formed on the back surface of the wafer, then warping of the wafer can be prevented, but the thickness of the semiconductor device increases

Engineering Contradiction:
Improvewarping preventionVSAvoiddevice thickness
Core Design Contradiction:
Stability of the object's compositionVSLength of stationary object

Solution Approach 1:

The patent applies different thickness values to different parts of the resin layer structure. The back side resin layer is formed with a thickness different from the front side resin layer, creating a non-uniform thickness distribution that prevents warping while controlling overall device thickness. This local differentiation resolves the contradiction between warping prevention and thickness control.

Inventive Principle:
Principle #3Local quality

2Illumination intensity

If filler is mixed in large amount in the resin material forming the back side resin layer, then the luster of the surface is reduced and markings become more visible, but the surface becomes greatly uneven

Engineering Contradiction:
Improvesurface lusterVSAvoidsurface uniformity
Core Design Contradiction:
Illumination intensityVSManufacturing precision

Solution Approach 1:

The patent optimizes the filler content parameter within a specific range (5-10 weight percent) to achieve the desired balance between reducing surface luster for marking visibility and maintaining surface uniformity. By precisely controlling this parameter, both requirements are satisfied simultaneously.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Prevents warping without increasing device thickness and improves visibility of markings by using a resin material with a higher thermal expansion coefficient and controlled filler content for the back side resin layer.

Implementation Method 1

the resin on the surface of the wafer thermally shrinks

Methodology Applied
Scientific EffectThermal shrinkage: Thermal Contraction

Implementation Method 2

a back side resin layer which is made of the same material and has the same thickness as those of the front side resin layer is formed on the back surface of the wafer. Thereby, when the resins are cooled for curing after heating, the resins on the front surface and the back surface of the wafer thermally shrink in the same manner

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS8723339B2Semiconductor device with front and back side resin layers having different thermal expansion coefficient and elasticity modulus
Publication Date: 2014.05.13 ROHM CO LTD
  • US8723339B2 patent drawing
  • US8723339B2 patent drawing
  • US8723339B2 patent drawing

AI summary

Disclosed are a semiconductor device wherein warping of a semiconductor chip due to a sudden temperature change can be prevented without increasing the thickness, and a semiconductor device assembly. The semiconductor device comprises a semiconductor chip, a front side resin layer formed on the front surface of the semiconductor chip by using a first resin material, and a back side resin layer formed on the back surface of the semiconductor chip by using a second resin material having a higher thermal expansion coefficient than the first resin material. The back side resin layer is formed thinner than the front side resin layer.