Semiconductor Resistance Control Layer Design
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Solution Overview
Problem
Existing semiconductor devices face challenges in designing circuits with appropriate electrostatic capacitance and electrical resistance due to the high implantation energy required to uniformly increase the resistance of the semiconductor substrate, making it difficult to control the resistance value effectively.
Innovation Solution
A semiconductor device is designed with a semiconductor substrate, a dielectric layer, a first electrode, a second electrode, and a resistance control layer that includes a low resistance region and a high resistance region, allowing for the adjustment of the resistance value of the resistor part by varying the electrical resistivity and dimensions of the low resistance region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If high implantation energy is used to uniformly increase the resistance of the semiconductor substrate, then the resistance uniformity is improved, but the control precision of the resistance value deteriorates
Solution Approach 1:
The invention divides the resistance control function into two separate regions: a first resistance control region for uniform resistance increase through ion implantation, and a second resistance control region for precise resistance value adjustment. This segmentation allows each region to optimize its specific function without compromising the other.
Solution Approach 2:
The invention applies different resistance control strategies to different local regions of the semiconductor substrate. The first resistance control region uses high-energy ion implantation for uniform resistance increase, while the second resistance control region uses low-energy ion implantation or doping for precise resistance value control, achieving local optimization of both uniformity and precision.
2Manufacturing precision
If the semiconductor substrate dimensions are changed to adjust resistance, then the resistance value control is improved, but the device complexity increases
Solution Approach 1:
The invention changes the electrical resistance parameter through controlled ion implantation or doping in specific regions, rather than changing the physical dimensions of the semiconductor substrate. This allows precise resistance value control while maintaining a simple device structure with standard substrate dimensions.
3Adaptability or versatility
If ion implantation is used to increase substrate resistance, then the resistance value adjustment is improved, but the manufacturing precision deteriorates due to difficulty in controlling resistance uniformly
Solution Approach 1:
The invention segments the ion implantation process into two distinct steps with different energies: a first ion implantation step with high energy for uniform resistance increase across the substrate, and a second ion implantation step with low energy for precise resistance value adjustment in specific regions. This segmentation resolves the contradiction between adjustability and uniformity.
Solution Approach 2:
The invention performs the first high-energy ion implantation as a preliminary action to establish uniform resistance characteristics across the entire substrate before performing the second low-energy ion implantation for precise local resistance adjustment. This preliminary uniform resistance foundation enables more accurate subsequent resistance control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the degree of freedom in circuit design by allowing for suitable changes in the combination of capacitor and resistor part values, improving the semiconductor device's performance and manufacturing efficiency.
Implementation Method 1
the dielectric layer functions as a capacitor part that forms an electrostatic capacitance
Implementation Method 2
the semiconductor substrate functions as a resistor part
Implementation Method 3
The resistance of the resistance separation region is increased by implanting ions into the semiconductor substrate and deteriorating crystallinity
Data Source
AI summary
A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface, a first electrode opposing the first main surface of the semiconductor substrate, a dielectric layer between the semiconductor substrate and the first electrode, a first resistance control layer on the first electrode, a wiring part on the first resistance control layer, and a second electrode opposing the second main surface of the semiconductor substrate. The first resistance control layer includes a first region that has a first electrical resistivity and that electrically connects the first electrode and the wiring part, and a second region that is aligned with the first region and has a second electrical resistivity higher than the first electrical resistivity of the first region.