Semiconductor Resistance Element Segmentation for Temperature Stability
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Solution Overview
Problem
Semiconductor devices face challenges in maintaining a stable resistance value due to temperature changes, as existing solutions require combining resistance elements with positive and negative temperature coefficients, which can increase element size and complexity.
Innovation Solution
A semiconductor device design that includes multiple first resistance elements with negative temperature coefficients connected in parallel and fewer second resistance elements with positive temperature coefficients, where the second resistance elements have a larger temperature coefficient absolute value, to minimize resistance value variation due to temperature changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If tantalum nitride with negative temperature coefficient is used to obtain positive temperature coefficient, then the temperature coefficient can be adjusted, but the film thickness must be increased which increases the element size
Solution Approach 1:
The resistance element is divided into multiple segments with different temperature coefficients (first resistance elements with negative TCR and second resistance elements with positive TCR). By segmenting the resistance element and combining different material properties, the desired positive TCR is achieved without increasing film thickness, thereby reducing element size while maintaining temperature coefficient adaptability
Solution Approach 2:
The invention uses composite materials by combining first resistance elements made of tantalum nitride (negative TCR) with second resistance elements made of copper or aluminum (positive TCR). This composite structure allows the overall resistance element to exhibit positive temperature coefficient while using thin films, avoiding the need to increase film thickness and element size
2Reliability
If resistance elements with positive and negative temperature coefficients are combined to offset TCR, then the magnitude of combined TCR is reduced, but the element size and complexity increase
Solution Approach 1:
The resistance element is segmented into multiple first resistance elements and second resistance elements that can be connected in parallel. This segmentation allows flexible configuration to achieve desired TCR compensation while maintaining simple overall structure. The segmented design enables independent optimization of each segment's properties without increasing overall complexity
Solution Approach 2:
The invention changes the key parameter of temperature coefficient by selecting specific materials (tantalum nitride for negative TCR, copper or aluminum for positive TCR) and adjusting their proportions. By changing material parameters rather than structural complexity, the invention achieves TCR compensation with simpler elements. The number and configuration of resistance elements can be adjusted as parameters to optimize performance without fundamentally increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively suppresses resistance value changes due to temperature variations, reduces element size, and simplifies manufacturing by using thinner films, thereby improving the stability and efficiency of the semiconductor device.
Implementation Method 1
The resistance element has temperature dependency, and, when the resistance value is changed with temperature, desired output voltage cannot be obtained. Therefore, it is necessary to reduce the variation range of the resistance value due to temperature change. A characteristic representing the change in the resistance value due to temperature change is a Temperature Coefficient of Resistance ('TCR').
Data Source
AI summary
A semiconductor device that includes a first wiring, a second wiring, and a first number of first resistance elements that are connected in parallel between the first wiring and the second wiring, and each of which has a negative first temperature coefficient. The semiconductor device further includes a second number of second resistance elements that are connected in parallel to the first resistance elements, each of which has a positive second temperature coefficient, the second temperature coefficient having an absolute value larger than an absolute value of the first temperature coefficient. The second number is smaller than the first number.