Semiconductor Device Resistive Field Plate Segmentation
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Solution Overview
Problem
Power semiconductor devices with resistive field plates face a trade-off between achieving high breakdown voltage and reducing leakage current, as the electric field distribution becomes uneven at the corner portions of the resistive field plate, affecting both breakdown voltage and leakage current characteristics.
Innovation Solution
The semiconductor device incorporates an inner-circumferential-side resistive field plate, an outer-circumferential-side resistive field plate, and intermediate resistive field plates with a specific planar pattern that connects the inner and outer plates, ensuring uniform electric field distribution by using second intermediate resistive field plates with a curvature that are not directly connected to the main plates, allowing for independent adjustment of impurity concentration to optimize both breakdown voltage and leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a resistive field plate is provided in the peripheral portion to improve breakdown voltage, then the peripheral breakdown voltage is improved, but the withstand voltage leakage current increases
Solution Approach 1:
The resistive field plate is divided into multiple segments (first, second, third, and fourth resistive field plates) arranged in a specific pattern. This segmentation allows the electric field to be distributed more uniformly across the peripheral portion, preventing field concentration that would otherwise increase leakage current while maintaining the breakdown voltage enhancement effect.
Solution Approach 2:
Different regions of the peripheral portion are provided with different resistive field plate configurations. The first and second resistive field plates are positioned at specific locations relative to the active portion, with the third and fourth plates completing the pattern. This local differentiation optimizes the electric field distribution in each region, achieving uniform overall distribution that reduces leakage current while maintaining high breakdown voltage.
2Strength
If the resistive field plate is made continuous to improve breakdown voltage, then the breakdown voltage is improved, but the electric field distribution becomes uneven at corner portions
Solution Approach 1:
The continuous resistive field plate structure is segmented into four separate resistive field plates positioned at specific locations. This segmentation prevents electric field concentration at corner portions while maintaining the overall field enhancement effect, achieving uniform electric field distribution across the peripheral portion.
Solution Approach 2:
The resistive field plates are positioned asymmetrically relative to the active portion, with specific spacing and orientation. The first and second resistive field plates are positioned at different locations, and the third and fourth plates complete the asymmetric pattern. This asymmetric arrangement optimizes the electric field distribution, preventing uneven field concentration at corners while maintaining breakdown voltage enhancement.
Data Source
AI summary
To provide a highly reliable semiconductor device having both an improved breakdown voltage and a reduced withstand voltage leakage current. An intermediate resistive field plate is comprised of a first intermediate resistive field plate coupled, at one end thereof, to an inner-circumferential-side resistive field plate and, at the other end, to an outer-circumferential-side resistive field plate and a plurality of second intermediate resistive field plates. The first intermediate resistive field plate has a planar pattern that is equipped with a plurality of first portions separated from each other in a first direction connecting the inner-circumferential resistive field plate to the outer-circumferential-side resistive field plate and linearly extending in a second direction orthogonal to the first direction, and repeats reciprocation along the second direction. The second intermediate resistive field plates are each connected with a first end portion on one side of the first portions and extend with a curvature.