Semiconductor Conductor Cutoff by Resistivity Conversion
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Solution Overview
Problem
In semiconductor device fabrication, the removal of conductive materials like Ru and silicide layers is challenging due to their difficulty in being completely etched, leading to potential current leakage and structural issues, necessitating an alternative method to physically remove unnecessary portions without damaging the structure.
Innovation Solution
A resistivity conversion process, such as oxidation or ion implantation, is employed to increase the electrical resistance of the to-be-cut portions, effectively deactivating them without physical removal, allowing for precise control and avoidance of structural damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If physical etching is used to remove conductive materials, then unnecessary conductive portions can be removed, but complete removal is difficult leading to current leakage and structural issues
Solution Approach 1:
The patent changes the electrical parameter (resistivity) of the conductive material by converting it from a low-resistance conductive state to a high-resistance insulating state through oxidation or ion implantation. This parameter change achieves complete electrical isolation without requiring physical removal of the material, thereby solving the contradiction between reliability and manufacturing precision.
Solution Approach 2:
The patent replaces the mechanical/physical etching process with a chemical or physical field-based conversion process (oxidation or ion implantation). Instead of physically removing the conductive material through etching, the method converts the material's electrical properties in place, achieving better isolation without the limitations of physical removal.
2Ease of manufacture
If physical etching is used to remove conductive materials, then unnecessary portions can be eliminated, but structural damage may occur
Solution Approach 1:
The patent substitutes the mechanical etching process with a in-place conversion process (oxidation or ion implantation) that transforms the conductive material's properties without removing it. This eliminates the structural damage associated with physical etching while maintaining process simplicity, as the conversion can be performed through standard semiconductor fabrication processes.
Solution Approach 2:
The patent introduces an intermediary conversion process (oxidation or ion implantation) that acts as a mediator between the conductive material and the final insulating state. This intermediary process allows for controlled transformation without the harsh mechanical removal that could damage underlying structures, enabling ease of manufacture while preserving structural integrity.
3Quantity of substance
If conductive materials are physically removed, then unnecessary conductive regions can be eliminated, but dummy filling is still required
Solution Approach 1:
The patent extracts the electrical conductivity property from the conductive material through oxidation or ion implantation, leaving the physical material in place but electrically inactive. This extraction approach eliminates the need for both physical removal and subsequent dummy filling, as the material remains structurally present but electrically isolated, thereby reducing device complexity.
Solution Approach 2:
The patent creates a functional copy of the insulating state by converting the conductive material's electrical properties without altering its physical presence. This approach eliminates the need for dummy filling processes, as the converted material itself serves the isolation function, reducing overall process complexity while maintaining the necessary electrical characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method ensures complete electrical isolation of unnecessary conductive regions, preventing current leakage and maintaining structural integrity by converting conductive materials into high-resistance states, thus eliminating the need for physical etching and dummy filling.
Implementation Method 1
A resistivity conversion process, such as oxidation or ion implantation, is employed to increase the electrical resistance of the to-be-cut portions
Implementation Method 2
A resistivity conversion process, such as oxidation or ion implantation, is employed to increase the electrical resistance of the to-be-cut portions
Data Source
AI summary
In a method of manufacturing a semiconductor device, a conductive pattern is formed in a surface region of a dielectric layer, a mask pattern including an opening over the conductive pattern is formed over the dielectric layer, a part of the conductive pattern is converted into a high-resistant part having a higher resistivity than the conductive pattern before the converting through the opening, and the mask pattern is removed.