Semiconductor Device Resistivity Control for Field Uniformity
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Solution Overview
Problem
Current semiconductor devices face challenges in improving characteristics such as reducing power consumption, enhancing reliability, and uniformizing the electric field, particularly in the off-state, due to limitations in resistivity and material configurations.
Innovation Solution
A semiconductor device configuration incorporating a first electrode, second electrode, third electrode, semiconductor regions of specific conductivity types, and a high resistance member with tailored resistivity and material compositions, including Si, N, O, and insulating regions, to control current flow and electric field distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional material configurations and resistivity values are used, then device structure is simple, but power consumption cannot be reduced and reliability is poor
Solution Approach 1:
The patent applies local quality by creating distinct regions with different resistivity characteristics within the semiconductor device. Specifically, it forms a first semiconductor region with a first resistivity and a second semiconductor region with a second resistivity, where the resistivity ratio between these regions is controlled within a specific range. This localized differentiation of electrical properties allows the device to achieve improved reliability through better electric field management while maintaining a relatively straightforward overall structure.
Solution Approach 2:
The patent employs composite material principles by combining different semiconductor materials or doped regions to create a multi-layered structure with tailored electrical characteristics. The device integrates regions with different conductivity types and resistivity values, forming a composite semiconductor structure that optimizes both power consumption and reliability. This composite approach enables precise control over current flow and electric field distribution without requiring overly complex external circuitry.
2Use of energy by moving object
If conventional electric field distribution is used, then device structure is simple, but power consumption increases and characteristics deteriorate
Solution Approach 1:
The patent implements local quality by establishing specific resistivity ratios between adjacent semiconductor regions. The first semiconductor region and second semiconductor region are designed with controlled resistivity relationships, creating localized electric field characteristics that reduce power consumption. This approach concentrates electrical control functions within specific device regions rather than requiring complex global control mechanisms.
Solution Approach 2:
The patent utilizes parameter changes by precisely controlling the resistivity values and their ratios within the semiconductor regions. By adjusting the resistivity ratio between the first and second semiconductor regions to fall within a specific range, the device optimizes its electrical characteristics. This parameter optimization enables reduced power consumption while maintaining a relatively simple structural configuration, avoiding the need for complex multi-layered or asymmetric designs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables reduced power consumption, improved reliability, and a uniform electric field, enhancing the overall performance and characteristics of the semiconductor device.
Implementation Method 1
a high resistance member with tailored resistivity and material compositions, including Si, N, O
Implementation Method 2
semiconductor regions of specific conductivity types, and a high resistance member with tailored resistivity
Data Source
AI summary
According to one embodiment, a semiconductor device includes first, second, and third electrodes, first, second, and third semiconductor regions, a first member, and a first insulating member. A direction from the first electrode toward the second electrode is along a first direction. The first semiconductor region includes first, second, and third partial regions. A second direction from the second partial region toward the first partial region crosses the first direction. The third partial region is between the second partial region and the second semiconductor region in the first direction. The third semiconductor region is provided between the third partial region and the second semiconductor region. The first insulating member includes a first insulating region and a second insulating region. The first insulating region is between the third partial region and the first member. The second insulating region is between the third semiconductor region and the third electrode.