Semiconductor Resistor Structure With Dielectric Resistance Modulation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in scaling down devices while maintaining functional density and reducing geometry size, which requires new materials and processes to form conductive features effectively in FinFETs and other transistor types, such as planar FETs and vertical gate FETs, without compromising performance.
Innovation Solution
The method involves forming conductive features by creating replacement gate structures with interfacial dielectrics, gate dielectric layers, and conductive fill materials, along with a modulation portion in the dielectric layer to modulate the resistance of the resistor layer through dopant implantation, allowing for precise control of crystallinity and resistance in the resistor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If new materials and processes are used to form conductive features in FinFETs, then device performance is improved, but device complexity increases
Solution Approach 1:
The gate structure is segmented into multiple functional layers: interfacial dielectric layer, gate dielectric layer, and conductive fill layer. Each layer serves a specific function, allowing independent optimization of electrical performance while managing complexity through modular construction.
Solution Approach 2:
An interfacial dielectric layer is introduced as an intermediary between the fin structure and the gate dielectric layer. This intermediate layer facilitates controlled electrical interaction while providing a stable interface, improving device performance without requiring direct complex interactions between components.
2Productivity
If geometry size is decreased to increase functional density, then production efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent employs precise control of material deposition parameters (thickness, composition, density) for each gate layer. By changing and optimizing these parameters, the manufacturing process achieves the required precision for scaled-down geometries while maintaining high production efficiency through standardized deposition techniques.
Solution Approach 2:
The interfacial dielectric layer is formed preliminarily before the gate dielectric layer to prepare the surface with optimal properties. This preliminary action ensures that subsequent layers can be deposited with higher precision, reducing manufacturing complexity at smaller geometries.
3Reliability
If dopant implantation is used to modulate resistance in the resistor layer, then electrical performance is improved, but process complexity increases
Solution Approach 1:
Dopant implantation is applied locally to specific regions of the resistor layer where resistance modulation is required. By concentrating the doping process only in necessary areas rather than uniformly across the entire layer, the patent achieves improved electrical performance while minimizing the increase in process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of efficient conductive features that enhance the performance of semiconductor devices by modulating resistance and improving crystallinity, thereby addressing the scaling challenges and maintaining device efficiency.
Implementation Method 1
a modulation portion in the dielectric layer to modulate the resistance of the resistor layer through dopant implantation
Data Source
AI summary
Semiconductor device structure and methods of forming the same are described. The structure includes a first dielectric layer including a first portion disposed over a source/drain region in an active region of a substrate and a modulation portion over an interlayer dielectric (ILD) in a resistor region of the substrate, the first portion of the first dielectric layer has a first composition, and the modulation portion of the first dielectric layer has a second composition different from the first composition. The structure further includes a resistor layer disposed on the modulation portion of the first dielectric layer in the resistor region and a second dielectric layer disposed over the first dielectric layer in the active region and over the resistor layer in the resistor region.