Semiconductor Resistor Divider Layout for High-Voltage Detection
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Solution Overview
Problem
Existing semiconductor devices face challenges in effectively detecting high voltages while maintaining stability and accuracy, particularly due to issues with resistor configurations that lead to high current flow and reduced withstand voltage.
Innovation Solution
The semiconductor device incorporates a resistor circuit with high-resistance and low-resistance parts connected in series, along with dummy resistors to improve detection accuracy and stability, and a voltage divider circuit with a source follower amplifier to process the detected voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a conventional resistor configuration is used for high voltage detection, then the detection function is provided, but the current flow becomes excessively high and withstand voltage decreases
Solution Approach 1:
The resistor is divided into multiple resistor elements connected in series. Each resistor element has a small resistance value, but their series connection achieves the required total resistance for accurate high voltage detection while limiting current flow to maintain reliability and withstand voltage capabilities.
2Measurement precision
If resistor elements are connected in series to increase resistance, then detection accuracy improves, but the number of components and device complexity increases
Solution Approach 1:
Multiple resistor elements are integrated into a single resistor structure on the semiconductor chip. This merging approach achieves the required resistance through internal series connection of multiple elements while presenting a unified component interface, thereby improving detection accuracy without proportionally increasing device complexity.
3Reliability
If the resistance value is increased to reduce current flow, then withstand voltage improves, but detection precision deteriorates due to signal weakness
Solution Approach 1:
The resistance value is optimized to a specific range (1 MΩ to 100 MΩ) that balances two competing requirements: high enough to limit current flow and maintain withstand voltage, but not so high as to create excessively weak detection signals. This parameter optimization resolves the contradiction between reliability and measurement precision.
Data Source
AI summary
The semiconductor device includes: an insulating layer provided on a semiconductor substrate; a first resistor embedded in the insulating layer and electrically connected to a node on a first potential side; a second resistor embedded in the insulating layer; a third resistor embedded in the insulating layer; and a reference electrode electrically connected to a node on a second potential side of the third resistor. An absolute value of the first potential is greater than an absolute value of the second potential. The first resistor, the second resistor, and the third resistor are connected in series. The first resistor is formed by connecting N resistors in parallel, the second resistor is formed by connecting M resistors in parallel, and the third resistor is formed by connecting L resistors in parallel, with N<L and M<L satisfied.