Semiconductor Resistor and Gate Pattern Formation
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Solution Overview
Problem
The existing methods for forming semiconductor devices require separate processes for resistor and gate pattern formation, increasing the number of processes and complexity.
Innovation Solution
The semiconductor device design integrates resistor and gate pattern formation using concurrent processes, allowing the resistors and gate patterns to be formed simultaneously, thus reducing the number of processes required.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If separate processes are used for resistor and gate pattern formation, then each structure can be formed with dedicated optimization, but the number of processes increases and manufacturing complexity increases
Solution Approach 1:
The patent merges the resistor pattern formation and gate pattern formation into a single concurrent process. Both patterns are formed simultaneously using the same fabrication steps, including patterning and etching processes, eliminating the need for separate dedicated processes for each structure type.
Solution Approach 2:
The patent employs universal fabrication processes that can form both resistor patterns and gate patterns with the same equipment and methodology. The concurrent formation process uses identical patterning techniques, etching conditions, and material deposition steps for both structures, making the manufacturing process multi-functional.
2Manufacturing precision
If separate processes are used for resistor and gate pattern formation, then each structure can be independently optimized, but the number of fabrication steps increases
Solution Approach 1:
The patent combines multiple fabrication steps into a single concurrent process flow. Resistor patterns and gate patterns are formed in the same processing cycle, reducing the total number of fabrication steps while maintaining the quality required for both structure types.
Solution Approach 2:
The concurrent formation process ensures continuous fabrication action where both resistor and gate patterns are being formed simultaneously in the same process sequence. This eliminates idle time between separate processes and maintains continuous productive operation throughout the fabrication cycle.
3Device complexity
If concurrent processes are used for resistor and gate pattern formation, then the number of processes is reduced and manufacturing is simplified, but process compatibility and integration challenges arise
Solution Approach 1:
The patent applies local quality by using selective masking and etching conditions in different regions of the substrate during the concurrent formation process. Specific areas receive tailored process parameters to form either resistor patterns or gate patterns, allowing both structures to be formed with appropriate local optimizations within the unified process flow.
Data Source
AI summary
Semiconductor devices including a resistor structure is provided. The semiconductor device may include a gate structure on an active region, a resistor structure on a field region and a first interlayer insulating layer on the gate structure and the resistor structure. The semiconductor devices may also include a resistor trench plug vertically penetrating through the first interlayer insulating layer and contacting the resistor structure and a second interlayer insulating layer on the first interlayer insulating layer and the resistor trench plug. Further, the semiconductor devices may include a resistor contact plug vertically penetrating through the first and second interlayer insulating layers and contacting the resistor structure.