Semiconductor Resistor Pattern Layout for Stable Resistance

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Solution Overview

Problem

Existing semiconductor devices face challenges in maintaining reliable resistance values and reducing pattern density differences between regions due to the overlap of dummy gate patterns with connection structures, leading to instability and variations in resistor patterns.

Innovation Solution

The semiconductor device design avoids placing dummy gate patterns below the connection regions of the resistor pattern, ensuring that the connection structure does not overlap with the dummy gate patterns, thereby stabilizing the resistance value and reducing variations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If dummy gate patterns are placed below the resistor pattern to maintain pattern density, then pattern density uniformity is improved, but the resistance value stability deteriorates due to unwanted coupling with connection structures

Engineering Contradiction:
Improvepattern density uniformityVSAvoidresistance value stability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The dummy gate pattern is segmented into two distinct regions: a first region that overlaps with the resistor pattern body to maintain pattern density, and a second region that is spaced apart from connection structures to prevent unwanted coupling. This segmentation allows the dummy gate pattern to simultaneously fulfill both functions of density maintenance and electrical isolation.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different portions of the dummy gate pattern are assigned different spatial relationships with the resistor pattern. The first region is positioned to overlap with the resistor body for density purposes, while the second region is positioned away from connection structures to avoid electrical interference. This local differentiation resolves the contradiction between density uniformity and resistance stability.

Inventive Principle:
Principle #3Local quality

2Device complexity

If dummy gate patterns overlap with connection regions to simplify layout, then device complexity is reduced, but manufacturing precision deteriorates due to resistance variations

Engineering Contradiction:
Improvelayout complexityVSAvoidresistance value consistency
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The dummy gate pattern is divided into a first region overlapping the resistor body and a second region spaced from connection structures. This segmentation simplifies layout by maintaining overall overlap while locally preventing connection interference, thus reducing device complexity without sacrificing manufacturing precision.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dummy gate pattern exhibits different spatial characteristics at different locations: overlap with the resistor body in the first region for layout simplicity, and spacing from connection structures in the second region for precision. This local quality approach maintains simplicity while ensuring precision.

Inventive Principle:
Principle #3Local quality

3Area of stationary object

If connection structures are placed close to dummy gate patterns to reduce area, then area efficiency is improved, but reliability deteriorates due to coupling effects

Engineering Contradiction:
Improvedevice areaVSAvoidresistor pattern stability
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The dummy gate pattern is segmented such that the first region can be positioned close to the resistor body for area efficiency, while the second region is spaced apart from connection structures to prevent coupling effects. This allows compact layout without compromising reliability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the dummy gate pattern have different proximity relationships: close to the resistor body in the first region for area efficiency, and spaced from connection structures in the second region for reliability. This local differentiation achieves both compactness and stability.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS10636785B2Semiconductor device
Publication Date: 2020.04.28 SAMSUNG ELECTRONICS CO LTD
  • US10636785B2 patent drawing
  • US10636785B2 patent drawing
  • US10636785B2 patent drawing

AI summary

A semiconductor device includes a substrate including a first region and a second region, a cell gate pattern on the first region of the substrate, a dummy gate pattern on the second region of the substrate, a resistor pattern on the second region of the substrate and over the dummy gate pattern, and a connection structure coupled to each of the connection regions. The resistor pattern includes a body region and connection regions at both sides of the body region. The dummy gate pattern overlaps the body region and does not be overlap the connection regions, when viewed in a plan view.