Semiconductor Thin-Film Resistor Oxidation Prevention
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Solution Overview
Problem
Semiconductor devices with thin-film resistors face oxidation issues due to moisture migration, leading to resistance value variations, and existing solutions increase manufacturing complexity and steps by requiring additional oxidation preventing films.
Innovation Solution
The semiconductor device incorporates a first wiring layer that overlaps the end portions of the thin-film resistor, preventing moisture migration and oxidation, achieved by modifying the masking process during manufacturing without adding steps or complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional lateral oxidation preventing films are provided to cover side surfaces of the thin-film resistor, then oxidation protection is improved, but manufacturing complexity and number of steps increase
Solution Approach 1:
The patent merges the function of lateral oxidation prevention with the existing first wiring layer by extending the wiring layer to overlap the end portions of the thin-film resistor. This integration eliminates the need for separate lateral oxidation preventing films while maintaining protection functionality, thereby reducing manufacturing steps and complexity.
Solution Approach 2:
The first wiring layer is designed to serve dual functions: electrical connection and lateral oxidation prevention. By extending the wiring layer to overlap the thin-film resistor end portions, it creates a moisture barrier that prevents oxidation, allowing a single structure to perform multiple protective roles without adding extra components.
2Reliability
If more oxidation preventing films are added to the structure, then moisture restriction is improved, but the number of manufacturing steps increases
Solution Approach 1:
The patent combines the moisture barrier function with the first wiring layer structure. The wiring layer is extended to overlap the thin-film resistor end portions, creating a continuous moisture barrier that prevents moisture migration from insulating films to the thin-film resistor, eliminating the need for additional dedicated barrier layers.
Solution Approach 2:
The first wiring layer serves itself by performing both its primary electrical function and the secondary function of moisture barrier. The extended wiring layer structure automatically provides lateral protection without requiring separate protective structures, allowing the device to protect itself using existing components.
Data Source
AI summary
A semiconductor device includes: a substrate; a first wiring layer arranged above the substrate; a first insulating film covering the first wiring layer; a lower oxidation preventing film arranged on the first insulating film; at least one thin-film resistor arranged on the lower oxidation preventing film; an upper oxidation preventing film arranged on the at least one thin-film resistor; a second insulating film covering the lower oxidation preventing film, the at least one thin-film resistor, and the upper oxidation preventing film; a second wiring layer arranged on the second insulating film; and a third insulating film covering the second wiring layer. The first wiring layer overlaps an end portion of the at least one thin-film resistor when viewed in a normal direction of one surface of the substrate.