Semiconductor Resistor Structure With Local Thickness Reduction
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Solution Overview
Problem
The challenge in semiconductor structures is to increase the resistance of resistors without increasing their length or footprint, which is essential for enhancing device density in electronic devices.
Innovation Solution
The solution involves forming a semiconductor structure with a conductive layer where the thickness of a portion of the conductive layer not under an electrode is reduced, either through an etch process or an oxidation process, thereby increasing the resistance of the resistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the length of the conductive layer is increased to increase resistance, then the resistance increases, but the footprint area increases
Solution Approach 1:
The conductive layer is designed with non-uniform thickness: a first portion under the electrode maintains original thickness for low resistance contact, while a second portion extends beyond the electrode with reduced thickness to increase resistance. This local variation in thickness allows resistance control without increasing footprint area.
Solution Approach 2:
Instead of increasing resistance by extending the conductive layer in the planar direction (increasing footprint), the invention transitions to the vertical dimension by reducing thickness in a specific region. This dimensional shift allows resistance control while maintaining compact footprint.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for a higher resistance of the resistor while maintaining or reducing its footprint, which contributes to increased packing density of devices in semiconductor real estate.
Implementation Method 1
a removal process, such as an etch process, is used to remove at least some of the second portion of the conductive layer and thereby reduce the thickness of the second portion of the conductive layer
Implementation Method 2
a modification process, such as an oxidation process, is used to modify or convert at least some of the second portion of the conductive layer to a different material and thereby reduce the thickness of the second portion of the conductive layer
Data Source
AI summary
A semiconductor structure includes a first dielectric layer, a conductive layer over the first dielectric layer, and a first electrode over a first portion of the conductive layer. A first thickness of the first portion of the conductive layer is greater than a second thickness of a second portion of the conductive layer not under the first electrode.