Semiconductor Device with Reverse Polarity Gate Control
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving stable and high threshold voltages, particularly in transistor operations, where existing configurations often result in lower threshold voltages and higher on-resistance due to limitations in gate voltage control and electrostatic capacitance.
Innovation Solution
A semiconductor device design incorporating a semiconductor member with Alx1Ga1−x1N and Alx2Ga1−x2N layers, where the first partial region between the gate electrode and conductive member receives a voltage with reverse polarity to the gate voltage, utilizing a first circuit that includes a capacitance and diode configuration to generate a negative voltage, thereby increasing the threshold voltage and reducing on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional gate voltage control is used, then device operation is simple, but threshold voltage is low and on-resistance is high
Solution Approach 1:
The voltage control function is segmented into two independent parts: the main gate electrode for basic operation and a separate conductive member for threshold voltage adjustment. This segmentation allows each component to perform its specific function optimally without interfering with the other, resolving the contradiction between simple operation and high threshold voltage.
Solution Approach 2:
A conductive member is introduced as an intermediary element between the gate electrode and the semiconductor layer. This intermediary applies a reverse polarity voltage to the first partial region, effectively adjusting the threshold voltage without complicating the main gate control mechanism. The intermediary enables independent control of threshold voltage while maintaining simple gate operation.
2Reliability
If reverse polarity voltage is applied to increase threshold voltage, then threshold voltage increases, but on-resistance increases
Solution Approach 1:
The reverse polarity voltage is applied locally only to the first partial region of the semiconductor layer beneath the gate electrode, rather than uniformly across the entire device. This localized application adjusts the threshold voltage in the critical switching region without significantly affecting the on-state resistance in the channel region, thus resolving the contradiction between high threshold voltage and low on-resistance.
Solution Approach 2:
The conductive member applies a partial reverse voltage only to the extent needed for threshold voltage adjustment in the first partial region, rather than applying full reverse bias across the entire device. This partial action achieves the desired threshold voltage increase while minimizing the impact on on-resistance, as the reverse voltage is not excessively applied to the conducting channel region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves a stable and high threshold voltage, approximately 1 V higher than baseline, with reduced on-resistance and simplified configuration, effectively addressing the limitations of existing semiconductor devices.
Implementation Method 1
a first circuit configured to apply a voltage with a reverse polarity to a gate voltage applied to the gate electrode to the first partial region
Implementation Method 2
a first circuit that includes a capacitance and diode configuration to generate a negative voltage
Data Source
AI summary
According to one embodiment, a semiconductor device includes a semiconductor member, a gate electrode, a source electrode, a drain electrode, a conductive member, a gate terminal, and a first circuit. The semiconductor member includes a first semiconductor layer including a first partial region and including Alx1Ga1−x1N (0≤x1≤1), and a second semiconductor layer including Alx2Ga1−x2N (0<x2≤1 and x1<x2). The first partial region is between the gate electrode and at least a portion of the conductive member in a first direction. The gate terminal is electrically connected to the gate electrode. The first circuit is configured to apply a first voltage to the conductive member based on a gate voltage applied to the gate terminal. The first voltage has a reverse polarity of a polarity of the gate voltage.