Semiconductor Device Reverse Recovery Breakdown Prevention
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Solution Overview
Problem
Semiconductor devices, such as MOSFETs, are prone to breakdown during the reverse recovery state due to high current densities, which can lead to device failure.
Innovation Solution
The semiconductor device is designed with specific insulation and electrode configurations, including p−-type and p+-type semiconductor regions, and field plate electrodes, to manage charge carrier discharge and maintain a high breakdown voltage, reducing the likelihood of breakdown while allowing efficient hole discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a diode is embedded in the semiconductor device to enable charge carrier discharge, then the device can effectively discharge accumulated electrons and holes, but high current density during reverse recovery state may cause breakdown
Solution Approach 1:
The semiconductor device is divided into multiple regions with different conductivity types (n-type and p-type regions) arranged in a specific pattern. This segmentation allows different parts of the device to handle charge carrier discharge independently, distributing the current density and preventing localized breakdown during reverse recovery state.
Solution Approach 2:
Different regions of the semiconductor device are assigned different conductivity types and structural characteristics optimized for their specific functions. The n-type and p-type regions create localized zones that guide and distribute charge carrier flow, ensuring that high current density during reverse recovery does not concentrate in a single critical area.
2Object-affected harmful factors
If insulation regions are added to manage charge carrier discharge paths, then breakdown voltage is maintained, but device structure becomes more complex
Solution Approach 1:
The insulation regions and electrodes are designed to serve multiple functions simultaneously: they provide electrical insulation to maintain breakdown voltage, guide charge carrier discharge paths, and distribute current density during reverse recovery. This multi-functionality reduces the need for additional separate components, managing complexity while achieving multiple objectives.
Solution Approach 2:
Insulation regions are strategically positioned as intermediary elements between conductive regions, acting as mediators that control the flow and distribution of charge carriers. These intermediary structures enable the device to maintain high breakdown voltage while providing defined paths for safe charge carrier discharge, resolving the contradiction between voltage maintenance and discharge capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the risk of semiconductor device breakdown in the reverse recovery state while maintaining a high breakdown voltage, ensuring efficient carrier discharge and minimizing current density.
Implementation Method 1
When a reverse voltage is applied to the diode, electrons accumulated in the diode are discharged to a drain electrode, and holes are discharged to a source electrode.
Implementation Method 2
A current flows in a forward direction of the embedded diode. When a reverse voltage is applied to the diode, electrons accumulated in the diode are discharged to a drain electrode, and holes are discharged to a source electrode.
Data Source
AI summary
A semiconductor device includes a first semiconductor region of a first conductivity type, a first electrode, a second electrode, a third electrode, a first insulation region, a second insulation region, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the second conductivity type, and a fourth electrode. The second electrode includes first portions and a second portion. The second portion extends in a first direction. The first portions extend in a direction away from the second portion. The second portion is between the first portions and the first electrode in a second direction. The fourth semiconductor region is positioned between adjacent first electrode portions in the first direction.