Semiconductor Layout for Lower Reverse Recovery Current
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Solution Overview
Problem
Existing semiconductor devices with integrated transistor and diode portions on the same substrate face challenges in efficiently managing carrier lifetime and reducing reverse recovery current, which affects the device's performance and reliability.
Innovation Solution
The semiconductor device incorporates a front surface side lifetime reduction region, specifically formed by introducing a lifetime killer such as helium ions in the diode and boundary portions, to control carrier lifetime and reduce reverse recovery current without affecting the transistor portion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If a lifetime reduction region is formed in the entire substrate including transistor portion, then reverse recovery current is reduced, but transistor performance deteriorates
Solution Approach 1:
The patent applies local quality by forming the lifetime reduction region selectively only in the diode portion and boundary portion of the semiconductor substrate, while excluding the transistor portion. This is achieved through selective ion implantation or diffusion processes that introduce recombination centers (such as gold, platinum, or oxygen) into specific regions. The selective formation allows the diode to have reduced carrier lifetime (lowering reverse recovery current) while the transistor maintains its original carrier lifetime and performance characteristics.
2Object-generated harmful factors
If carrier lifetime is reduced to lower reverse recovery current, then diode performance improves, but overall device complexity increases
Solution Approach 1:
The patent segments the semiconductor substrate into distinct functional regions: transistor portion, diode portion, and boundary portion. The lifetime reduction region is formed selectively in the diode portion and boundary portion, but not in the transistor portion. This segmentation allows independent optimization of each region's characteristics - the diode benefits from reduced carrier lifetime while the transistor maintains its performance, avoiding the need for separate devices or complex additional structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively adjusts carrier lifetime in the diode portion, reduces reverse recovery current, and enhances the semiconductor device's performance and reliability by minimizing the impact on the transistor portion.
Implementation Method 1
specifically formed by introducing a lifetime killer such as helium ions in the diode and boundary portions
Data Source
AI summary
Provided is a semiconductor device, wherein a straight line extending from an end portion E1 in the extending direction of a contact hole for electrically connecting an emitter electrode and a front surface of a semiconductor substrate toward a back surface of the semiconductor substrate is defined as a first perpendicular line, a straight line forming a predetermined angle θ1 with respect to the first perpendicular line and passing through the end portion E1 in the extending direction of the contact hole is defined as a first straight line, a position where the first straight line intersects a back surface of the semiconductor substrate is defined as a position M1, and the position M1 is located on an outer side of a cathode region in the extending direction.