Semiconductor Layout for Lower Reverse Recovery and Stable Threshold Voltage
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Solution Overview
Problem
Conventional semiconductor devices with both transistor and diode portions on the same substrate face challenges in reducing reverse recovery loss and turn-on loss due to high hole injection and interface state changes caused by lifetime control regions, which affect threshold voltage and latch-up withstand capability.
Innovation Solution
The semiconductor device incorporates an injection suppression region without the extraction region on the diode portion side, along with a lifetime control region that is not formed under the emitter region of the transistor portion, to suppress hole injection and maintain threshold voltage stability, thereby reducing reverse recovery and turn-on losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If an extraction region is provided in the injection suppression region, then hole injection is enhanced, but threshold voltage stability deteriorates
Solution Approach 1:
The injection suppression region is designed without an extraction region, creating a localized structure that differs from conventional designs. This configuration suppresses hole injection while maintaining threshold voltage stability in the transistor portion, as the lifetime control region is formed only in the injection suppression region and diode portion, not in the transistor drift region.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces reverse recovery and turn-on losses by suppressing hole injection and maintaining threshold voltage stability, improving the semiconductor device's performance and reliability.
Implementation Method 1
irradiating a predetermined depth position of a semiconductor substrate with a particle beam such as helium ions to provide a lifetime control region including a lifetime killer
Data Source
AI summary
Provided is a semiconductor device which includes a semiconductor substrate including a transistor portion and a diode portion. The transistor portion includes an injection suppression region that suppresses injection of a carrier of a second conductivity type at an end portion on the diode portion side in a top view of the semiconductor substrate. The diode portion includes a lifetime control region including a lifetime killer. Both the transistor portion and the diode portion include a base region of a second conductivity type on a surface of the semiconductor substrate, the transistor portion further includes an emitter region of a first conductivity type and an extraction region of a second conductivity type having a higher doping concentration than the base region on the surface of the semiconductor substrate, and the injection suppression region is not provided with the emitter region and the extraction region.