Semiconductor Active Area Ridge Structure for Withstand Voltage
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Solution Overview
Problem
The miniaturization of semiconductor devices has led to a reduction in the distance between active areas, resulting in decreased withstand voltage between contact sections, making it difficult to form semiconductor devices with appropriate voltage levels.
Innovation Solution
The semiconductor device design includes active areas with varying widths and the use of shallow trench isolation regions and thermal oxidation processes to create a sufficient distance between contact plugs, effectively increasing the pattern size and withstand voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the line width of circuit patterns is reduced to achieve miniaturization, then the device size is reduced, but the withstand voltage between adjacent active areas decreases
Solution Approach 1:
The patent introduces a third dimension by forming a ridge structure that protrudes from the surface of the active area. This vertical dimension provides additional insulation path length between adjacent contact plugs, increasing withstand voltage without requiring larger lateral spacing between active areas, thus resolving the contradiction between miniaturization and voltage withstand capability
Solution Approach 2:
The ridge structure is formed only in specific locations where contact plugs are present, rather than uniformly across the entire active area. This localized approach increases withstand voltage at critical points while maintaining compact overall device dimensions, addressing both miniaturization and reliability requirements
2Productivity
If the distance between adjacent active areas is reduced, then the device density is increased, but the withstand voltage between contact sections decreases
Solution Approach 1:
By adding vertical height through the ridge structure, the patent creates an extended insulation path that compensates for reduced lateral spacing between active areas. This allows higher device density while maintaining adequate withstand voltage through the combined lateral and vertical insulation distance
Solution Approach 2:
The ridge structure segments the electric field path between adjacent contact plugs, forcing the electric field to travel through the ridge material rather than directly through air or thin oxide. This segmentation of the electric field path increases breakdown voltage and allows closer spacing of active areas
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design increases the withstand voltage between adjacent active areas by creating a substantial increase in pattern size, enhancing the semiconductor device's electrical performance.
Implementation Method 1
a surface of the semiconductor substrate is oxidized
Data Source
AI summary
According to one embodiment, a semiconductor device comprises an active area extending in a first direction, a contact plug located on a first portion of the active area, and a transistor located on a second portion adjacent to the first portion of the active area in the first direction. A width of a top surface area of the first portion in a second direction perpendicular to the first direction is smaller than that of a top surface area of the second portion in the second direction.