Semiconductor Rod Light Emitting Elements with Sol-Gel Insulating Layer
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Solution Overview
Problem
Current light emitting elements face inefficiencies due to surface defects formed during the fabrication process, which affect their external quantum efficiency and electrical characteristics.
Innovation Solution
A method for fabricating light emitting elements involves forming semiconductor rods with an insulating layer using a sol-gel process, where the insulating layer is created by immersing the substrate in a solution containing precursor materials, and heat-treating the semiconductor rods to minimize surface defects and enhance light emitting efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional fabrication methods are used to form light emitting elements, then the manufacturing process is simpler, but surface defects are formed on the semiconductor layers reducing external quantum efficiency
Solution Approach 1:
An insulating layer is formed on the semiconductor layers before completing the light emitting element fabrication. This preliminary action prevents surface defects from forming during subsequent processing steps, thereby improving surface quality and external quantum efficiency without fundamentally changing the overall fabrication workflow
Solution Approach 2:
An insulating layer is introduced as an intermediary between the semiconductor layers and the external environment. This intermediate layer protects the semiconductor surfaces from defect formation while allowing the fabrication process to continue with conventional methods, thus improving surface quality without significantly increasing manufacturing complexity
2Manufacturing precision
If the insulating layer is formed thicker to better protect the semiconductor surface, then surface defects are reduced, but the external quantum efficiency decreases due to increased light absorption
Solution Approach 1:
The thickness of the insulating layer is precisely controlled within a specific range (23-80 nm). This parameter optimization ensures the layer is thick enough to prevent surface defects and thin enough to minimize light absorption, thereby simultaneously achieving surface protection and maintaining high external quantum efficiency
Solution Approach 2:
The insulating layer is applied selectively to specific regions where surface defects are most likely to occur, rather than uniformly across the entire device. This localized application provides targeted protection while minimizing the total amount of insulating material that could absorb light, thus balancing surface defect reduction with energy loss prevention
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in improved external quantum efficiency and electrical characteristics of the light emitting elements, with an external quantum efficiency of 20.2±0.6% and reduced surface defects, leading to enhanced light emitting efficiency and display performance.
Implementation Method 1
forming an insulating layer surrounding sides of the semiconductor rods through a sol-gel process by immersing the substrate, including the semiconductor rods, in a solution containing a precursor material
Implementation Method 2
heat-treating the semiconductor rods to minimize surface defects and enhance light emitting efficiency
Data Source
AI summary
A method for fabricating a light emitting element includes preparing a substrate, and forming a first semiconductor material layer, a light emitting material layer, a second semiconductor material layer and an electrode material layer on the substrate, forming semiconductor rods spaced apart from each other by etching the first semiconductor material layer, the light emitting material layer, the second semiconductor material layer and the electrode material layer in a direction perpendicular to an upper surface of the substrate, forming an insulating layer surrounding sides of the semiconductor rods through a sol-gel process by immersing the substrate, including the semiconductor rods, in a solution containing a precursor material, and forming light emitting elements by separating the semiconductor rods, including the insulating layer, from the substrate, and the light emitting elements have an external quantum efficiency of 20.2±0.6%.