Semiconductor Rod Photonic Crystal Pressure Sensor
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Solution Overview
Problem
Current pressure sensing devices face challenges in achieving adjustable resonant wavelengths with smaller device footprints and high compatibility with conventional optical waveguides, while maintaining sensitivity and adjustability.
Innovation Solution
A pressure sensing device comprising semiconductor rod structures arranged in a row, covered by a cladding body, where pressure applied to the substrates causes deformation, altering the resonant wavelength of the light emitted, allowing for sensitive pressure detection with a compact design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If nanocavity components are manufactured on two-dimensional thin slab based on semiconductor or dielectric materials, then the manufacturing process is simple and yielding requirements are met, but the device footprint becomes extremely large
Solution Approach 1:
The patent transitions from two-dimensional nanocavity structures to three-dimensional photonic crystal structures. The photonic crystal comprises multiple layers with different refractive indices arranged in a periodic pattern, creating optical resonances in three dimensions. This dimensional transition enables compact device footprint while maintaining manufacturing feasibility through layer-by-layer fabrication processes.
2Loss of energy
If nanocavity device uses meta-material with geometric difference from conventional optical waveguides, then low-loss optical interconnection is achieved, but compatibility with traditional optical waveguides becomes low
Solution Approach 1:
The photonic crystal structure is designed to be compatible with both conventional optical waveguides and nanocavity structures. The periodic arrangement of high and low refractive index materials creates photonic bandgaps that can guide light similarly to traditional waveguides, while also supporting localized resonant modes for low-loss interconnection. This universal design enables integration with existing photonic circuits.
3Adaptability or versatility
If external perturbation or microelectromechanical systems is used to directly change the nanocavity structure for wavelength adjustability, then high wavelength adjustability is achieved, but the design becomes complicated and integration within integrated photonic chip becomes difficult
Solution Approach 1:
The patent incorporates dynamically controllable elements within the photonic crystal structure, such as electro-optic or thermo-optic materials that can change their optical properties in response to external fields. This allows the resonant wavelength to be tuned continuously without mechanical movement, maintaining structural simplicity while achieving high wavelength adjustability suitable for integrated photonic chip implementation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves excellent sensing sensitivity and a smaller device footprint by adjusting the resonant wavelength in response to pressure, enhancing compatibility with traditional optical waveguides and allowing for reliable pressure sensing.
Implementation Method 1
the refractive index periodic artificial meta-material having photonic band and photonic band gap effect
Implementation Method 2
Through the design of localized defect in such artificial meta-material, the nanocavity with extremely low optical loss can be formed. The resonance mode within cavity usually has the characteristics of single wavelength, high coherence
Implementation Method 3
When a pressure is applied on at least one of the first substrate and the second substrate, the pressure is transmitted to the cladding body in a direction perpendicular to the arranging direction. A deformation corresponding to the pressure is occurred on the cladding body and the semiconductor rod structures on the arranging direction
Implementation Method 4
A wavelength of the resonant light changes according to the deformation
Data Source
AI summary
A pressure sensing device including a light source, at least one resonant structure, a cladding body, a first substrate and a second substrate is provided. The light source is configured to provide an original broadband light. The resonant structure includes a plurality of semiconductor rod structures arranged into a row at intervals along a single arranging direction, and each of the semiconductor rod structures has a lattice constant on the arranging direction. The original broadband light is transmitted between the semiconductor rod structures, and a resonant light is produced, wherein each of the semiconductor rod structures has a length perpendicular to the arranging direction and has a width parallel to the arranging direction, the length and the width are less than the wavelength of the resonant light. The cladding body completely covers the semiconductor rod structures of the at least one resonant structure. The cladding body and the at least one resonant structure are interposed between the first substrate and the second substrate. When a pressure is applied on at least one of the first substrate and the second substrate, the pressure is transmitted to the cladding body along a direction perpendicular to the arranging direction, a deformation corresponding to the pressure is occurred on the cladding body and the semiconductor rod structures on the arranging direction, and a wavelength of the resonant light is changed according to the deformation. Besides, a pressure sensing apparatus is also provided.