Semiconductor Sample Preparation with Protective Capping and Gap Filler
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Solution Overview
Problem
Current semiconductor defect analysis methods are inadequate in detecting defects in semiconductor structure samples during fabrication, leading to lower quality samples and increased costs due to unidentified defects.
Innovation Solution
A system and method that utilize machine learning techniques to analyze images of semiconductor structure samples, combined with a protective capping layer of high strength and hardness and a gap filler material that prevents deformation during electron beam irradiation, along with a sample defect recognition circuitry to predict and determine defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional sample preparation methods are used, then sample preparation is simpler and faster, but defects in the semiconductor structure cannot be effectively detected
Solution Approach 1:
The method applies preliminary actions by performing multiple preparation steps before analysis: forming a protective capping layer on the semiconductor structure, depositing a gap filler material in gaps between structures, and preparing the sample for microscopy. These advance preparations ensure the sample is in optimal condition for defect detection, resolving the contradiction between detection precision and preparation complexity.
Solution Approach 2:
The patent introduces intermediary materials and layers: a protective capping layer that shields the semiconductor structure during preparation, and a gap filler material that fills gaps between structures to prevent deformation. These intermediaries enable precise defect detection by creating a stable, deformation-free sample structure that can withstand electron beam irradiation.
2Stability of the object's composition
If no protective capping layer is used, then sample preparation is simpler, but the semiconductor structure deforms during electron beam irradiation
Solution Approach 1:
The protective capping layer is formed in advance before electron beam irradiation occurs. This preliminary protective measure ensures the semiconductor structure maintains its composition and shape stability during analysis, preventing deformation while accepting the additional manufacturing step.
Solution Approach 2:
The protective capping layer acts as a cushioning layer that protects the semiconductor structure from the harmful effects of electron beam irradiation. By placing this protective barrier beforehand, the structure is shielded from deformation, resolving the contradiction between structural stability and manufacturing ease.
3Manufacturing precision
If gap filler material is not used, then sample preparation is faster and simpler, but structures deform due to shrinkage during irradiation
Solution Approach 1:
The gap filler material is deposited in advance to fill gaps between semiconductor structures before analysis. This preliminary action prevents shrinkage and deformation during electron beam irradiation, maintaining dimensional precision while accepting the additional preparation time required.
Solution Approach 2:
The gap filler material serves as an intermediary substance that fills spaces between structures, preventing them from deforming or shrinking during irradiation. This intermediary material maintains the dimensional precision of the semiconductor structures, resolving the contradiction between manufacturing precision and preparation productivity.
4Measurement precision
If machine learning analysis is implemented, then defect detection accuracy improves, but analysis time and computational resources increase
Solution Approach 1:
The patent replaces manual or conventional mechanical analysis methods with machine learning-based automated analysis. The machine learning model processes microscopy images to identify defects, improving detection accuracy while the automated nature of the system efficiently handles analysis time, resolving the contradiction between accuracy and time loss.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively identifies defects in semiconductor structure samples, improving sample quality, reducing costs, and enabling remediation of the sample preparation process to prevent future defects.
Implementation Method 1
a gap filler material that prevents deformation during electron beam irradiation
Data Source
AI summary
Systems and methods are provided for determining defects in a semiconductor structure sample that is prepared for analysis by microscopy. A semiconductor structure sample preparation and analysis system includes a semiconductor structure sample that includes a structure, a protective capping layer on the structure, and a gap filler material on the protective capping layer. A microscopy apparatus acquires an image of the semiconductor structure sample. Sample defect recognition circuitry determines the presence of a defect in the semiconductor structure sample based on the acquired image.